MMBT2369ALT1G

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MMBT2369ALT1G

TRANS NPN 15V 0.2A SOT23-3

  • Fabricant
  • Mfr. Partie #MMBT2369ALT1G
  • Paquet SOT23-3
  • Fiche de données
  • En stock4911

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType NPN
Current-Collector(Ic)(Max) 200 mA
Voltage-CollectorEmitterBreakdown(Max) 15 V
VceSaturation(Max)@IbIc 500mV @ 10mA, 100mA
Current-CollectorCutoff(Max) 400nA
DCCurrentGain(hFE)(Min)@IcVce 20 @ 100mA, 1V
Power-Max 225 mW
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Vue d'ensemble

Description

MMBT2369ALT1G is a N-channel MOSFET designed for low-voltage applications. It features a low on-resistance, making it suitable for high-efficiency switching and power management in various electronic devices. With a maximum drain-source voltage of 30V and a continuous drain current rating of up to 12A, this MOSFET is ideal for applications such as power supplies, motor drivers, and signal switching.
The device is packaged in a compact SOT-23 form factor, allowing for efficient space utilization on PCBs. Its fast switching capability minimizes energy losses, contributing to better thermal performance and reliability in circuit designs.
Key specifications include a threshold voltage range, low gate charge, and a maximum power dissipation rating. Overall, MMBT2369ALT1G is a versatile component that provides robust performance in various electronic applications requiring efficient switching and control.

Features

The MMBT2369ALT1G is a NPN bipolar junction transistor (BJT) designed for low power switching and amplification applications. Key features include:
1. Maximum Ratings: Collector-Emitter Voltage (Vce) up to 60V, and Collector Current (Ic) up to 1A, making it suitable for various electronic circuits.
2. Gain: High DC current gain (hFE) typically between 100 to 300, which enhances its amplification capabilities.
3. Package Type: Offered in a SOT-23 surface mount package, facilitating compact design and efficient space utilization on PCBs.
4. Temperature Range: Operates effectively across a temperature range of -55°C to +150°C, ensuring reliability in diverse environmental conditions.
5. Switching Speed: Fast switching capabilities, suitable for high-frequency applications.
6. Low Saturation Voltage: Provides efficient performance with lower power loss during operation.
These features make the MMBT2369ALT1G versatile for applications in consumer electronics, automotive systems, and industrial controls.

Package

The MMBT2369ALT1G is a NPN bipolar junction transistor (BJT) packaged in a SOT-23 form factor. This compact surface-mount package is suitable for various applications, including switching and amplification in electronic circuits.

Pinout

The MMBT2369ALT1G is a general-purpose NPN bipolar junction transistor (BJT) in a SOT-23 package. It has a total of three pins.
Pin Configuration:
1. Base (B): The base terminal controls the transistor's operation and is where the input signal is applied.
2. Collector (C): The collector terminal is where the output current flows, and it is typically connected to the load.
3. Emitter (E): The emitter terminal allows current to exit the transistor and is usually connected to the ground or negative supply.
Function: The MMBT2369ALT1G is primarily used for switching and amplification applications in electronic circuits. It can handle a maximum collector current of 600 mA and has a maximum collector-emitter voltage of 45 V. Its compact size and efficiency make it suitable for use in various consumer electronics and signal processing applications.

Manufacturer

The MMBT2369ALT1G is manufactured by ON Semiconductor. ON Semiconductor is a global supplier of semiconductor-based solutions, focusing on various sectors including automotive, industrial, communications, and consumer electronics. The company specializes in producing a wide range of products, including analog, logic, discrete, and power management devices. Established in 1999 through the merger of several companies, ON Semiconductor has grown to become a key player in the semiconductor industry, providing innovative technologies that enable efficient and reliable electronic systems.

Application

The MMBT2369ALT1G is a high-frequency NPN transistor commonly used in RF applications, such as amplifiers and oscillators. It is suitable for low-power switching applications, audio and video signal processing, and general-purpose amplification. Its compact size and high gain make it ideal for mobile devices, consumer electronics, and communication systems.

Equivalent

The MMBT2369ALT1G is a NPN bipolar junction transistor (BJT) suitable for low-frequency applications. Equivalent products include the MMBT2369, 2N4401, and BC547. For specific applications, it’s important to check pin configuration, current, voltage ratings, and gain characteristics to ensure compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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