MMBT2222LT1G

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MMBT2222LT1G

TRANS NPN 30V 0.6A SOT23-3

  • Fabricant
  • Mfr. Partie #MMBT2222LT1G
  • Paquet SOT23-3
  • Fiche de données
  • En stock4796

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType NPN
Current-Collector(Ic)(Max) 600 mA
Voltage-CollectorEmitterBreakdown(Max) 30 V
VceSaturation(Max)@IbIc 1.6V @ 50mA, 500mA
Current-CollectorCutoff(Max) 10nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce 100 @ 150mA, 10V
Power-Max 300 mW
Frequency-Transition 250MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Vue d'ensemble

Description

The MMBT2222LT1G is a NPN bipolar junction transistor (BJT) commonly used in various electronic applications. It features a maximum collector current of 800 mA and a collector-emitter voltage of 40 V, making it suitable for low to moderate power applications. The device is known for its high switching speed and reliability, making it ideal for use in amplifiers, switch-mode power supplies, and general-purpose switching applications.
The transistor is housed in a compact SOT-23 package, which allows for efficient use of space on printed circuit boards. It has a gain (hFE) of approximately 100 to 300, depending on the operating conditions. Additionally, the MMBT2222LT1G is characterized by its low saturation voltage, enabling efficient operation in switching applications.
Overall, this transistor is a versatile and widely used component in both consumer electronics and industrial applications, favored for its performance, availability, and cost-effectiveness.

Features

The MMBT2222LT1G is a popular NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. Key features include:
1. Type: NPN BJT.
2. Package: Available in a compact SOT-23 package.
3. Maximum Collector-Emitter Voltage (Vce): 40V.
4. Maximum Collector Current (Ic): 800mA.
5. DC Current Gain (hFE): Ranges from 100 to 300, depending on the current.
6. Transition Frequency (ft): Approximately 250 MHz, suitable for high-speed applications.
7. Low Saturation Voltage: Ensures efficient switching performance.
8. Thermal Resistance: Low thermal resistance, improving reliability in various thermal conditions.
9. Applications: Suitable for low-power amplifiers, switching circuits, and general-purpose applications in consumer electronics.
Overall, the MMBT2222LT1G combines good performance with versatility, making it a widely used component in electronic designs.

Package

The MMBT2222LT1G is available in a SOT-23 package type. This surface-mount package is compact, making it suitable for space-constrained applications while providing good thermal performance and electrical characteristics for discrete transistor functions.

Pinout

The MMBT2222LT1G is a NPN bipolar junction transistor (BJT) housed in a SOT-23 package. It has a pin count of 3.
The pin functions are as follows:
1. Base (B) - This is the input pin where the control signal is applied to regulate the current flow between the collector and the emitter.
2. Collector (C) - This pin is where the output current flows into the transistor. It is connected to the load.
3. Emitter (E) - This pin provides the path for current to exit the transistor, completing the circuit.
The MMBT2222LT1G is widely used for switching and amplification applications in electronic circuits.

Manufacturer

The MMBT2222LT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in a wide range of semiconductor solutions, including analog, discrete, and power management devices. They cater to various industries, such as automotive, industrial, communications, and consumer electronics. The company focuses on providing energy-efficient semiconductor components and solutions to meet the demands of modern electronic applications.

Application

The MMBT2222LT1G is a NPN bipolar junction transistor widely used in switching and amplification applications. It is suitable for low-power switching applications, general-purpose amplification, signal processing, and driving loads in consumer electronics, automotive, and industrial control systems. Its compact size and efficiency make it ideal for use in mobile devices, computer peripherals, and audio equipment.

Equivalent

The MMBT2222LT1G is an NPN bipolar junction transistor (BJT). Equivalent products include the 2N2222, 2N4401, BC547, and MPS2222A. These transistors have similar specifications like current rating and voltage, but always check the datasheets for specific parameters to ensure compatibility in your application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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