MMBT2222AM3T5G

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MMBT2222AM3T5G

TRANS NPN 40V 0.6A SOT-723

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  • Mfr. Partie #MMBT2222AM3T5G
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Spécifications

Part Status Active
Base Product Number MMBT2222
Transistor Type NPN
Current - Collector (Ic) (Max) 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Power - Max 640 mW
Frequency - Transition 300MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package SOT-723
Supplier Device Package SOT-723
Packaging Cut Tape (CT), Tape & Reel (TR)

Vue d'ensemble

Description

MMBT2222AM3T5G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic applications such as switching and amplification. It features a low on-resistance, which allows for efficient power handling and reduced heat generation during operation. The device is designed for low-voltage applications, typically operating at a maximum drain-source voltage of around 60V, with a continuous drain current rating of about 3A.
This MOSFET is often packaged in a TO-220 or similar format, facilitating easy heat dissipation. Its gate threshold voltage is relatively low, enabling it to be driven by standard logic levels. Applications include power management, motor control, and LED lighting, making it a versatile choice for designers. When selecting MMBT2222AM3T5G for a project, consider its electrical characteristics, such as gate capacitance and switching speed, to ensure compatibility with your circuit design.

Features

The MMBT2222AM3T5G is a general-purpose NPN bipolar junction transistor (BJT) designed for a wide range of applications. Key features include:
1. Maximum Collector-Emitter Voltage (Vce): 40V, allowing it to handle moderate voltage levels.
2. Collector Current (Ic): Up to 800mA, suitable for driving various loads.
3. Power Dissipation (Pd): 500mW, indicating its ability to manage heat in circuits.
4. Gain (hFE): Ranges from 100 to 300, providing good amplification capability.
5. Package Type: Offered in a small surface mount SOT-23 package, making it suitable for compact designs.
6. Switching Speed: Fast switching capabilities, making it ideal for digital and analog applications.
7. Operating Temperature: Ranges from -55°C to +150°C, ensuring reliability in diverse environments.
Overall, the MMBT2222AM3T5G is commonly used in switching and amplification circuits in consumer electronics, automotive applications, and signal processing.

Package

The MMBT2222AM3T5G is packaged in a SOT-23 surface mount package. This small, plastic package is designed for easy integration into electronic circuits, providing efficient thermal performance and space-saving benefits.

Pinout

The MMBT2222AM3T5G is a NPN bipolar junction transistor (BJT) in a surface-mount package. It has a pin count of 3. The functions of the pins are as follows:
1. Pin 1 (Emitter): This is the emitter terminal, where current exits the transistor.
2. Pin 2 (Base): This is the base terminal, which controls the transistor's operation. A small current at this pin allows a larger current to flow from the collector to the emitter.
3. Pin 3 (Collector): This is the collector terminal, where current enters the transistor.
The MMBT2222A is commonly used for switching and amplification applications in low to medium power devices.

Manufacturer

The MMBT2222AM3T5G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor solutions, including analog, discrete, and power management devices. They serve various markets, including automotive, industrial, consumer electronics, and communication. The company focuses on innovation and sustainability, aiming to provide efficient and reliable products that meet the growing demands of modern electronics.

Application

The MMBT2222AM3T5G is a general-purpose NPN transistor widely used in switching and amplification applications. Its key application areas include signal amplification in audio devices, low-power switching in digital circuits, driving LEDs, and interfacing with sensors. It is commonly found in consumer electronics, automotive applications, and industrial control systems.

Equivalent

The MMBT2222AM3T5G is a NPN bipolar junction transistor (BJT). Equivalent products include the 2N2222A, MPS2222, and PN2222A. These transistors are commonly used in similar applications and have comparable specifications. Always check the datasheets for specific electrical characteristics to ensure compatibility.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

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