MMBFJ175LT1G

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MMBFJ175LT1G

JFET P-CH 30V 0.225W SOT23-3

  • Fabricant
  • Mfr. Partie #MMBFJ175LT1G
  • Paquet SOT23-3
  • Fiche de données
  • En stock6399

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType P-Channel
Voltage-Breakdown(V(BR)GSS) 30 V
Current-Drain(Idss)@Vds(Vgs=0) 7 mA @ 15 V
Voltage-Cutoff(VGSoff)@Id 3 V @ 10 nA
InputCapacitance(Ciss)(Max)@Vds 11pF @ 10V (VGS)
Resistance-RDS(On) 125 Ohms
Power-Max 225 mW
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Vue d'ensemble

Description

The MMBFJ175LT1G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-power applications. It features low on-resistance, fast switching speeds, and high efficiency, making it suitable for various electronic circuits, including switching and amplification tasks.
Key specifications include a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 1.2A. It operates at a low gate threshold voltage (V_GS(th)), typically around 2-4V, allowing for easy interfacing with low-voltage logic levels.
The device is packaged in a small SOT-23 form factor, which is ideal for space-constrained applications. Its low thermal resistance enables efficient heat dissipation, enhancing reliability.
Applications for the MMBFJ175LT1G span consumer electronics, automotive systems, and industrial controls, where compactness and energy efficiency are paramount. Overall, this MOSFET serves as a versatile component in modern electronic design.

Features

The MMBFJ175LT1G is an N-channel MOSFET designed for low power applications. Key features include:
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: Continuous drain current (I_D) can reach up to 1.5A.
3. On-Resistance: Low on-resistance (R_DS(on)) improves efficiency, typically around 0.5 Ohms at V_GS = 10V.
4. Gate Threshold Voltage: V_GS(th) is in the range of 2V to 4V, allowing for efficient switching with low gate drive voltages.
5. Package Type: Available in the SOT-23 package, which is compact and suitable for space-constrained applications.
6. Fast Switching Speed: Suitable for high-speed applications due to low gate charge (Q_G).
7. Applications: Commonly used in low voltage switching, analog switching, and battery management systems.
These features make the MMBFJ175LT1G ideal for efficient and compact design in various electronic circuits.

Package

The MMBFJ175LT1G is packaged in a SOT-23 (Small Outline Transistor) format, which is a compact, surface-mount package ideal for space-constrained applications.

Pinout

The MMBFJ175LT1G is an N-channel JFET (Junction Field Effect Transistor) housed in a SOT-23 package. It has three pins, which serve the following functions:
1. Gate (G) - Pin 1: This is the control terminal used to apply the input signal.
2. Drain (D) - Pin 2: This pin connects to the load and is where the output is taken from.
3. Source (S) - Pin 3: This is the terminal through which the current exits the device.
This transistor is commonly used in low-noise applications, signal amplification, and switching.

Manufacturer

The MMBFJ175LT1G is manufactured by ON Semiconductor, a global semiconductor company known for its wide range of products, including power management, analog, logic, and discrete components. Founded in 1999, ON Semiconductor specializes in providing semiconductor solutions for various applications, including automotive, industrial, and communications. The company focuses on energy-efficient technologies and has a strong commitment to sustainability and innovation in the semiconductor industry. It serves a diverse customer base and operates on a global scale, supporting advancements in modern electronics.

Application

The MMBFJ175LT1G is a N-channel JFET transistor commonly used in applications such as low-noise amplification, signal processing, audio electronics, and RF front-end circuits. Its characteristics make it suitable for sensing, switching, and buffering applications in communication systems and instrumentation.

Equivalent

The MMBFJ175LT1G is a JFET N-channel transistor. Equivalent products include the 2N5457, 2N5458, and 2N5459, which are also N-channel JFETs with varying current ratings and characteristics. Always check the specific datasheets for performance parameters to ensure compatibility for your application.

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TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

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