MMBF4391LT1G

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MMBF4391LT1G

JFET N-CH 30V SOT23-3

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Spécifications

Part Status Active
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) 30 V
Drain to Source Voltage (Vdss) 30 V
Current - Drain (Idss) @ Vds (Vgs=0) 50 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id 4 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds 14pF @ 15V
Power - Max 225 mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Product Number MMBF4391
Resistance - RDS(On) 30 Ohms

Vue d'ensemble

Description

The MMBF4391LT1G is a N-channel MOSFET designed for low-voltage, high-speed switching applications. It features a low gate threshold voltage, enabling efficient operation in a variety of circuits. This device typically has a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of around 1.8A, making it suitable for power management, signal switching, and general-purpose applications.
The MMBF4391LT1G is housed in a compact SOT-23 package, which is ideal for space-constrained designs. Its low on-resistance (R_DS(on)) helps minimize power losses during operation, contributing to improved overall efficiency in electronic systems. The transistor is also characterized by fast switching speeds, which is beneficial for high-frequency applications.
Overall, the MMBF4391LT1G is a versatile and reliable component widely used in consumer electronics, automotive, and industrial applications, providing designers with a robust solution for efficient power management and switching tasks.

Features

The MMBF4391LT1G is an N-channel MOSFET designed for low-power applications. Key features include:
1. Voltage Rating: It operates at a maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: The continuous drain current (I_D) is rated at up to 1.5A, making it suitable for various applications.
3. On-Resistance: It has a low on-resistance (R_DS(on)) of approximately 0.5 ohms at V_GS = 10V, ensuring efficient power handling.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1 to 3V, allowing for easy drive from low-voltage logic levels.
5. Package: Available in a SOT-23 package, making it compact and suitable for space-constrained designs.
6. Applications: Commonly used in switching applications, power management, and low-side switching in various electronic circuits.
Overall, the MMBF4391LT1G is a versatile and reliable choice for low-power MOSFET applications.

Package

The MMBF4391LT1G is packaged in a SOT-23 (Small Outline Transistor) package type. This surface-mount package is commonly used for low-power applications and offers a compact design for efficient circuit integration.

Pinout

The MMBF4391LT1G is a N-channel MOSFET packaged in a SOT-23-3 format. It has three pins.
1. Gate (G): This pin controls the MOSFET's operation. A voltage applied here allows current to flow between the drain and source.
2. Drain (D): This is the output pin through which current flows when the device is on.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit.
The device is designed for low-voltage, low-power applications, often used in switching and amplification functions. Its compact size makes it suitable for surface-mount technology (SMT) in various electronic circuits.

Manufacturer

The MMBF4391LT1G is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that designs, manufactures, and sells a wide range of electronic components, including discrete devices, analog, and mixed-signal integrated circuits. The company serves various markets, including automotive, industrial, consumer, and communications. ON Semiconductor focuses on providing energy-efficient solutions and innovative technologies to meet the growing demands of its customers. Its products are used in everything from automotive applications to consumer electronics and advanced computing systems.

Application

The MMBF4391LT1G is a N-channel MOSFET primarily used in low-voltage, high-speed switching applications. Its application areas include power management circuits, signal switching, audio amplifiers, and RF amplification. It is suitable for use in portable devices, battery management systems, and various consumer electronics where efficient power control and fast switching are required.

Equivalent

The MMBF4391LT1G is a N-channel MOSFET used for low-power applications. Equivalent products include the BSS138, 2N7000, and BS170, which also serve similar purposes in switching and amplification. Ensure to check their specifications for voltage, current ratings, and package types to confirm compatibility with your application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

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