MMBF170LT1G

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MMBF170LT1G

MOSFET N-CH 60V 500MA SOT23-3

  • Fabricant
  • Mfr. Partie #MMBF170LT1G
  • Paquet SOT-23
  • Fiche de données
  • En stock4740

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 500mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 5Ohm @ 200mA, 10V
Vgs(th)(Max)@Id 3V @ 1mA
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 60 pF @ 10 V
PowerDissipation(Max) 225mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Vue d'ensemble

Description

The MMBF170LT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage applications. It features a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 1.2A. The device is housed in a SOT-23 package, making it suitable for compact designs.
Key characteristics include low on-resistance (R_DS(on)) for improved efficiency and thermal performance, making it ideal for power management, switching, and amplification applications in consumer electronics and industrial systems. The MMBF170LT1G also offers fast switching speeds, which enhances its performance in high-frequency applications.
This MOSFET is widely used in applications such as low-power amplifiers, signal switching, and general-purpose switching tasks. Its reliability and compact size make it a favored choice among engineers for various electronic circuit designs.

Features

The MMBF170LT1G is an N-channel MOSFET designed for low-voltage applications. Key features include:
1. Maximum Drain-Source Voltage: 60V, allowing it to handle a range of applications.
2. Continuous Drain Current: Up to 500mA, suitable for various switching and amplification tasks.
3. Gate Threshold Voltage: Typically between 1.0V to 3.0V, enabling operation with low gate voltages.
4. RDS(on): Low on-resistance (around 1.5 ohms at VGS = 10V), which minimizes power losses during operation.
5. Fast Switching Speeds: Ideal for high-frequency applications due to rapid turn-on and turn-off times.
6. Package: Available in a compact SOT-23 package, facilitating space-saving designs.
7. High Input Impedance: Reduces loading on preceding stages, enhancing circuit performance.
These features make the MMBF170LT1G suitable for use in power management, signal switching, and RF applications.

Package

The MMBF170LT1G is packaged in a SOT-23 (Small Outline Transistor) package. This surface-mount package is designed for efficient space utilization and thermal performance in electronic circuits.

Pinout

The MMBF170LT1G is a N-channel MOSFET transistor in a surface-mount SOT-23 package. It has three pins.
Pin Functions:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows or prevents current flow between the drain and source.
2. Drain (D) - This pin connects to the load. Current flows from the drain to the source when the MOSFET is in the on state.
3. Source (S) - This pin is connected to ground or the negative side of the circuit. It serves as the terminal through which the current exits the MOSFET.
The MMBF170LT1G is commonly used in low-power switching and amplification applications due to its low on-resistance and high-speed performance.

Manufacturer

The MMBF170LT1G is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in designing and manufacturing a wide range of electronic components, including power management, analog, and digital signal processing devices. The company serves various industries, such as automotive, industrial, communications, computing, and consumer electronics. ON Semiconductor focuses on providing energy-efficient solutions and has a strong commitment to sustainability and innovation in the semiconductor sector.

Application

The MMBF170LT1G is a low-noise, N-channel MOSFET used primarily in RF applications, amplification, and switching circuits. Its characteristics make it suitable for RF amplifiers, signal processing, and analog signal switching in communication systems. Additionally, it can be used in low-power circuits for consumer electronics and IoT devices where efficient signal handling is required.

Equivalent

The MMBF170LT1G is an N-channel MOSFET often used in low-voltage applications. Equivalent products include the 2N7000, BS170, and BSS138. Ensure to check specific parameters like voltage, current ratings, and package types to confirm compatibility for your application.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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