MMBD6050LT1G

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MMBD6050LT1G

DIODE STANDARD 70V 200MA SOT233

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Spécifications

Part Status Active
Technology Standard
Voltage - DC Reverse (Vr) (Max) 70 V
Current - Average Rectified (Io) 200mA
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed
Current - Reverse Leakage @ Vr 100 nA @ 50 V
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Operating Temperature - Junction -55°C ~ 150°C
Base Product Number MMBD6050
Reverse Recovery Time (trr) 4 ns

Vue d'ensemble

Description

The MMBD6050LT1G is a dual general-purpose NPN/PNP transistor designed for use in low-power switching and amplification applications. It features a standard SOT-23 package, which allows for compact design in electronic circuits. This transistor operates with a maximum collector current of 500 mA and supports a voltage rating of up to 60V.
Key specifications include a high current gain (hFE) and fast switching speeds, making it suitable for applications in signal processing, amplification, and switching circuits. Its low saturation voltage enhances efficiency in power applications. The MMBD6050LT1G is commonly used in consumer electronics, LED drives, and various automation systems, offering reliability and versatility for designers.
When integrating this component into a circuit, it is essential to consider its thermal characteristics and ensure proper biasing to optimize performance.

Features

The MMBD6050LT1G is a dual NPN/PNP transistor designed for low-power switching and amplification applications. Key features include:
1. Dual Configuration: Contains both NPN and PNP transistors in a single package, allowing for versatile circuit designs.
2. Low Vce(sat): Offers low saturation voltage, enhancing efficiency in switching applications.
3. High Speed: Capable of fast switching speeds, making it suitable for high-frequency applications.
4. Small Package: Available in a compact SOT-23 package, ideal for space-constrained applications.
5. Enhanced Thermal Performance: Operates efficiently across a wide temperature range.
6. Low Noise: Minimal noise generation makes it suitable for audio and RF applications.
7. High Gain: Provides good current gain (hFE), enabling effective amplification.
These features make the MMBD6050LT1G suitable for various applications, including signal processing, small-signal amplification, and general-purpose switching.

Package

The MMBD6050LT1G is packaged in a SOT-23 (Small Outline Transistor) form factor. This surface-mount package is commonly used for its compact size and efficiency in electronic circuits.

Pinout

The MMBD6050LT1G is a dual N-channel MOSFET in a SOT-23 package, featuring a total of 5 pins. The pin configuration is as follows:
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Drain 1 (D1): The drain terminal for the first MOSFET.
3. Source 1 (S1): The source terminal for the first MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Drain 2 (D2): The drain terminal for the second MOSFET.
The MMBD6050LT1G is designed for switching applications, making it suitable for low-voltage drive applications and enhancing efficiency in power management systems. It features low on-resistance, aiding in low power loss during operation.

Manufacturer

The MMBD6050LT1G is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in developing and manufacturing a wide range of products, including analog, discrete, and power management devices. The company focuses on providing solutions for various applications in automotive, industrial, consumer, and communication sectors. With a strong commitment to innovation and sustainability, ON Semiconductor aims to enable energy-efficient designs and technologies across multiple industries.

Application

The MMBD6050LT1G is a dual N-channel MOSFET designed for use in various applications, including switching power supplies, motor control, and high-speed switching. It is suitable for low-voltage and high-efficiency designs in consumer electronics, telecommunications, and industrial equipment. Its compact size and efficiency make it ideal for portable devices and energy-saving applications.

Equivalent

The MMBD6050LT1G is a dual common-emitter transistor designed for low-power applications. Equivalent products include the 2N3904, 2N2222, and MMBT3904, which are also NPN transistors suitable for similar applications. Always verify specific electrical characteristics and packaging to ensure compatibility in your design.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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