MJE350G

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MJE350G

TRANS PNP 300V 0.5A TO126

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Spécifications

Package Bulk,Bulk
ProductStatus Active
TransistorType PNP
Current-Collector(Ic)(Max) 500 mA
Voltage-CollectorEmitterBreakdown(Max) 300 V
Current-CollectorCutoff(Max) 100µA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce 30 @ 50mA, 10V
Power-Max 20 W
OperatingTemperature -65°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-225AA, TO-126-3

Vue d'ensemble

Description

MJE350G is a type of NPN bipolar junction transistor (BJT) commonly used in power amplification and switching applications. It features a high current gain and can handle significant power levels, making it suitable for various electronic circuits. The device typically comes in a TO-220 package, which allows for efficient heat dissipation, thereby improving reliability in high-power applications.
The MJE350G is characterized by its ability to operate at higher voltages and currents compared to standard transistors, with a maximum collector current of around 3A and a collector-emitter voltage rating of 140V. It is often utilized in audio amplifiers, power supplies, and motor control circuits.
Overall, the MJE350G is favored in designs that require robust performance and thermal stability, making it a versatile choice for engineers in both commercial and industrial applications.

Features

The MJE350G is a high-voltage NPN power transistor designed for general-purpose amplification and switching applications. Key features include:
1. Voltage Rating: It has a collector-emitter voltage (Vce) of up to 350V, suitable for high-voltage applications.
2. Current Rating: The maximum continuous collector current (Ic) is 1.5A, allowing for significant power handling in circuits.
3. Power Dissipation: It can dissipate up to 40W, enabling it to operate efficiently under load.
4. Gain: The transistor offers a high current gain (hFE) typically ranging from 15 to 100, providing effective amplification.
5. Package Type: The MJE350G typically comes in a TO-220 package, allowing for easy heatsinking and integration into various circuits.
6. Temperature Range: It operates effectively over a wide temperature range, ensuring reliability in different environments.
These features make the MJE350G suitable for applications such as power supplies, audio amplifiers, and motor control circuits.

Package

The MJE350G is typically packaged in a TO-220 case type. This package provides efficient heat dissipation and is commonly used for high-power applications, allowing for easy mounting to heatsinks.

Pinout

The MJE350G is a high-voltage NPN transistor commonly used for switching and amplification applications. It features a pin count of three, with the following functions:
1. Base (B) - The input terminal used to control the transistor's operation.
2. Collector (C) - The terminal that receives the current from the power supply or load.
3. Emitter (E) - The terminal through which the current exits the transistor to ground or the load.
The MJE350G is designed for high voltage applications, with a maximum collector-emitter voltage (Vce) of 350V and a maximum collector current (Ic) of 0.5A. It is often utilized in power supply circuits, relay drivers, and other applications requiring high switching performance.

Manufacturer

The MJE350G is manufactured by ON Semiconductor, a global provider of semiconductor-based solutions. ON Semiconductor specializes in a wide range of technology sectors, including automotive, industrial, and consumer electronics. The company focuses on energy-efficient innovations and designs, producing components such as power management devices, sensors, and analog ICs. Founded in 1999, ON Semiconductor has grown through acquisitions and now operates worldwide, serving diverse markets and emphasizing sustainability and performance in its products.

Application

The MJE350G is a high-voltage NPN transistor commonly used in applications such as power amplifiers, switching regulators, and signal amplification. It is suitable for driving loads in linear and switching configurations, including relay drivers and motor controls. Its high collector-emitter voltage rating makes it ideal for applications in power electronics, audio amplifiers, and industrial equipment.

Equivalent

The MJE350 is a high-voltage NPN transistor typically used in power applications. Equivalent products include the MJE2955 (for PNP applications), TIP120, TIP125, and 2N3055 (though the latter is a power transistor). For specific replacements, consider checking datasheets for voltage, current ratings, and package compatibility to ensure suitability.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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