MJD45H11-1G

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MJD45H11-1G

TRANS PNP 80V 8A IPAK

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Spécifications

Part Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 8 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Current - Collector Cutoff (Max) 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A, 1V
Power - Max 1.75 W
Frequency - Transition 90MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
Supplier Device Package IPAK
Base Product Number MJD45

Vue d'ensemble

Description

MJD45H11-1G is a high-performance N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for various switching applications. It features a maximum drain-source voltage (VDS) of 45V and a continuous drain current (ID) of up to 23A, making it suitable for power management in consumer electronics, automotive systems, and industrial applications.
Key characteristics include low on-resistance (RDS(on)), which enhances efficiency by reducing power losses during operation, and a fast switching speed, facilitating high-frequency applications. The device is housed in a TO-220 package, allowing for effective heat dissipation and easy mounting on heat sinks.
The MJD45H11-1G is also designed to handle high gate drive voltages, ensuring reliable performance in various circuit configurations. Its robustness and reliability make it a popular choice among engineers for designing efficient power supply circuits and amplifiers.

Features

The MJD45H11-1G is a N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 45V, making it suitable for various power management applications.
2. Current Rating: The device can handle continuous drain currents up to 30A, providing robust performance in demanding environments.
3. R_DS(on): It features a low on-resistance (R_DS(on)) of around 0.1 ohms, ensuring efficient operation with minimal power loss.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically in the range of 1-3V, allowing for easy interfacing with low-voltage control circuits.
5. Package: It comes in a TO-220 package, facilitating effective heat dissipation and ease of mounting in various applications.
6. Applications: Ideal for use in motor drives, power supplies, and other switching applications requiring high efficiency and reliability.
Overall, the MJD45H11-1G is a versatile component suitable for a range of electronic applications.

Package

The MJD45H11-1G is packaged in a TO-220 format, which is a standard package type for power transistors. This package provides good thermal performance and is commonly used in applications requiring high power dissipation.

Pinout

The MJD45H11-1G is a NPN power transistor with a total of 3 pins. Its primary functions include switching and amplification in various electronic applications.
The pin configuration is as follows:
1. Base (B) - This pin controls the transistor's operation, allowing for amplification and switching.
2. Collector (C) - This pin is connected to the load and is where the main current flows when the transistor is in the 'on' state.
3. Emitter (E) - This pin is connected to ground or the negative side of the circuit, allowing current to flow out of the transistor.
The transistor is commonly used in power amplification and switching applications due to its capability to handle high currents and voltages.

Manufacturer

The MJD45H11-1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components and solutions, including power management, sensors, and connectivity products. The company serves various markets such as automotive, industrial, telecommunications, and consumer electronics. Founded in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor has a strong focus on energy-efficient technologies and sustainable practices in its product offerings.

Application

The MJD45H11-1G is a NPN power transistor primarily used in switching applications and general-purpose amplification. Its application areas include automotive electronics, industrial motor controls, power supplies, audio amplifiers, and inverters. It is suitable for handling high current and voltage, making it ideal for power management in various electronic circuits.

Equivalent

The MJD45H11-1G is a PNP power transistor. Equivalent products include:
1. MJD45H11 (without the G suffix, same specifications)
2. MPSU45 (higher voltage rating)
3. TIP42 (similar performance)
4. 2N6107 (higher power rating)
Always check the datasheets for specific electrical characteristics and packaging to ensure compatibility.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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