MJD44H11T4G

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MJD44H11T4G

TRANS NPN 80V 8A DPAK

  • Fabricant
  • Mfr. Partie #MJD44H11T4G
  • Paquet DPAK-3
  • Fiche de données
  • En stock5481

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
TransistorType NPN
Current-Collector(Ic)(Max) 8 A
Voltage-CollectorEmitterBreakdown(Max) 80 V
VceSaturation(Max)@IbIc 1V @ 400mA, 8A
Current-CollectorCutoff(Max) 1µA
DCCurrentGain(hFE)(Min)@IcVce 40 @ 4A, 1V
Power-Max 1.75 W
Frequency-Transition 85MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-252-3, DPak (2 Leads + Tab), SC-63

Vue d'ensemble

Description

MJD44H11T4G is a high-performance N-channel MOSFET designed for various electronic applications, including power management and switching. It features a low on-resistance and fast switching capabilities, making it suitable for use in power supplies, motor drives, and other high-efficiency applications. The device typically operates with a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) rating that supports high-load scenarios.
Its construction includes a robust package that aids in thermal dissipation, ensuring reliability under demanding conditions. The MJD44H11T4G is often utilized in automotive, industrial, and consumer electronics, capitalizing on its efficiency and thermal performance. Additional features may include a low gate threshold voltage, making it easier to drive with standard logic levels. Overall, the MJD44H11T4G is a versatile component in modern circuit designs that require efficient power handling capabilities.

Features

The MJD44H11T4G is an N-channel MOSFET designed for high-performance switching applications. Key features include:
1. Voltage Rating: With a maximum drain-source voltage (VDS) of 40V, it can handle various applications efficiently.
2. Current Rating: It supports a continuous drain current (ID) of up to 44A, allowing for significant load handling.
3. RDS(on): The on-resistance is low (typically around 0.025 ohms), contributing to minimal power loss and enhanced efficiency during operation.
4. Gate Threshold Voltage (VGS(th)): The gate-source threshold voltage ranges from 1V to 2.5V, facilitating easier drive requirements.
5. Package Type: It comes in a TO-220 package, ensuring good thermal dissipation and ease of mounting.
6. Fast Switching: Designed for high-speed switching applications, making it suitable for power supplies, converters, and motor control.
These attributes make the MJD44H11T4G ideal for automotive, industrial, and consumer electronics applications.

Package

The MJD44H11T4G is packaged in a TO-220 form factor, which is a type of transistor package designed for power applications. It features a metal tab for heat dissipation, making it suitable for high-power usage in various electronic circuits.

Pinout

The MJD44H11T4G is a N-channel MOSFET transistor housed in a TO-220 package. It has a total of 3 pins. The function of each pin is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows or disrupts the current flow between the drain and source.

2. Drain (D): This is the terminal through which the main current flows out of the MOSFET when it is in the 'on' state.
3. Source (S): This pin connects to the circuit's ground or the negative supply, allowing current to flow from the drain to the source when the MOSFET is activated.
The MJD44H11T4G is typically used in power switching applications due to its high current rating and efficient operation.

Manufacturer

The manufacturer of the MJD44H11T4G is ON Semiconductor. ON Semiconductor is a multinational company that specializes in manufacturing a wide range of semiconductor components, including power management, analog, discrete, and logic devices. The company serves various industries such as automotive, industrial, communications, consumer electronics, and computing. With a focus on sustainable innovation and energy-efficient solutions, ON Semiconductor plays a significant role in the development of technologies that enable a more connected and efficient world.

Application

The MJD44H11T4G is a power transistor primarily used in applications such as switching power supplies, motor control, and audio amplification. It is suitable for high-speed switching applications and can handle high current and voltage, making it ideal for automotive, industrial, and consumer electronics. Its efficient performance in power management makes it a key component in various electronic circuits.

Equivalent

The MJD44H11T4G is a N-channel MOSFET, typically used for switching and amplification applications. Equivalent products include the IRF540, STP16NF06, and FQP50N06. Always verify specifications such as voltage, current ratings, and package types to ensure compatibility for your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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