MJD44H11T4

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MJD44H11T4

TRANS PWR NPN 8A 80V DPAK

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Spécifications

Package Cut Tape (CT),Bulk
ProductStatus Obsolete
TransistorType NPN
Current-Collector(Ic)(Max) 8 A
Voltage-CollectorEmitterBreakdown(Max) 80 V
VceSaturation(Max)@IbIc 1V @ 400mA, 8A
Current-CollectorCutoff(Max) 1µA
DCCurrentGain(hFE)(Min)@IcVce 60 @ 2A, 1V
Power-Max 20 W
Frequency-Transition 85MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-252-3, DPak (2 Leads + Tab), SC-63

Vue d'ensemble

Description

MJD44H11T4 is a high-performance N-channel power MOSFET designed for various applications, including power management and switching. It features a low on-resistance, which minimizes conduction losses and improves efficiency in circuits. Typically, it has a high voltage rating, making it suitable for use in power supplies, motor drivers, and amplifiers.
The device is characterized by a fast switching speed, allowing for efficient operation in high-frequency applications. Its TO-220 package facilitates effective heat dissipation, ensuring reliability under heavy loads. The MJD44H11T4 is often used in automotive, industrial, and consumer electronics due to its robustness and versatility.
Engineers appreciate its ease of use in circuit design, with standard gate drive requirements. Overall, the MJD44H11T4 stands out for its balance of performance, efficiency, and thermal management, making it a popular choice in the power semiconductor market.

Features

The MJD44H11T4 is a high-performance N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: Supports a high drain-source voltage (V_DS) of up to 30V, making it suitable for various power switching applications.
2. Current Handling: With a continuous drain current (I_D) rating of 44A, it can efficiently manage high power loads.
3. Low R_DS(on): Offers a low on-resistance (R_DS(on)), which enhances efficiency by minimizing power loss during operation.
4. Fast Switching: Capable of fast switching speeds, which is critical for applications in switching power supplies and converters.
5. Thermal Performance: Equipped with a robust thermal design, improving reliability in high-temperature conditions.
6. Package Type: Typically provided in a TO-220 package, facilitating better heat dissipation and ease of mounting.
These features make the MJD44H11T4 ideal for applications in automotive, industrial, and consumer electronics power circuits.

Package

The MJD44H11T4 is typically packaged in a TO-220 form factor, which is a type of transistor package that allows for efficient heat dissipation and easy mounting on heatsinks.

Pinout

The MJD44H11T4 is a N-channel power MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate will turn the device on or off.
2. Drain (D) - This pin is where the output current flows from the MOSFET. It connects to the load.
3. Source (S) - This pin is the common reference point for the gate and drain. It typically connects to ground in common-source configurations.
The MJD44H11T4 is designed for high-speed switching applications and has a maximum voltage rating of 55V and a continuous drain current rating of 15A.

Manufacturer

The MJD44H11T4 is a power transistor manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor solutions, including power management, analog, and digital products. The company focuses on providing innovative technologies for various applications, including automotive, industrial, computing, and consumer electronics. With a commitment to sustainability and energy efficiency, ON Semiconductor plays a significant role in the semiconductor industry, offering high-performance components that support advanced electronic systems.

Application

The MJD44H11T4 is a high-voltage NPN power transistor commonly used in applications such as switching power supplies, motor drives, and industrial automation. Its robust design makes it suitable for audio amplifiers, power inverters, and various consumer electronics. Additionally, it is often employed in automotive applications where high current and voltage handling are required.

Equivalent

The MJD44H11T4 is a NPN power transistor. Equivalent products include:
1. TIP31C
2. BD139
3. MPSU10
4. 2N3055 (though it has different ratings, it can be used in similar applications)
Always check the specific electrical characteristics and ratings to ensure compatibility in your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

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