MJD44H11G

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MJD44H11G

TRANS NPN 80V 8A DPAK

  • Fabricant
  • Mfr. Partie #MJD44H11G
  • Paquet DPAK-3
  • Fiche de données
  • En stock2593

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Spécifications

Package Bulk,Tube
ProductStatus Active
TransistorType NPN
Current-Collector(Ic)(Max) 8 A
Voltage-CollectorEmitterBreakdown(Max) 80 V
VceSaturation(Max)@IbIc 1V @ 400mA, 8A
Current-CollectorCutoff(Max) 1µA
DCCurrentGain(hFE)(Min)@IcVce 40 @ 4A, 1V
Power-Max 1.75 W
Frequency-Transition 85MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-252-3, DPak (2 Leads + Tab), SC-63

Vue d'ensemble

Description

MJD44H11G is a high-performance N-channel MOSFET designed for various applications, including power management and switching. It features a low on-resistance value, which minimizes power loss and improves efficiency in electronic circuits. The device can handle high current and voltage levels, making it suitable for use in power supplies, converters, and motor control systems.
Key parameters include a maximum drain-source voltage (V_DS) rating of 60V and a continuous drain current (I_D) rating of around 44A. Its fast switching capabilities enable efficient operation in high-frequency applications. The MJD44H11G is packaged in a TO-220 format, allowing for efficient heat dissipation.
Overall, this MOSFET is ideal for engineers and designers looking to enhance the performance and efficiency of their electronic projects, particularly in high-power applications. Proper thermal management and circuit protection are essential when integrating this component into designs to ensure reliability and longevity.

Features

The MJD44H11G is a high-performance N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 55V, making it suitable for medium voltage applications.
2. Current Handling: The device can handle continuous drain currents up to 49A, allowing it to efficiently manage power in demanding conditions.
3. Low RDS(on): The on-resistance (RDS(on)) is typically low, around 0.025 ohms, which minimizes power losses during operation.
4. Fast Switching: Designed for fast switching applications, it enhances performance in PWM control and other high-frequency scenarios.
5. Thermal Management: It features a thermal resistance rating allowing for effective heat dissipation, suitable for high-power environments.
6. TO-220 Package: The MJD44H11G comes in a TO-220 package, providing good thermal performance and ease of mounting.
These features make the MJD44H11G apt for applications in power supplies, motor control, and automotive systems.

Package

The MJD44H11G is typically packaged in a TO-220 form factor. This package type is used for power transistors and provides efficient heat dissipation due to its metal tab and large surface area.

Pinout

The MJD44H11G is an NPN power transistor designed for various applications, such as switching and amplification. It comes in a TO-220 package, which typically has three pins. The pin configuration is as follows:
1. Collector (C) - This is the main current-carrying terminal connected to the load.
2. Base (B) - This terminal controls the transistor's operation; applying a voltage here allows current to flow between the collector and emitter.
3. Emitter (E) - This terminal is the output side of the transistor, where current exits.
The MJD44H11G is capable of handling high currents and voltages, with a maximum collector current of 15 A and a collector-emitter voltage rating of 60 V. It is commonly used in power switching applications, motor drivers, and amplifier circuits.

Manufacturer

The MJD44H11G is manufactured by ON Semiconductor, a global semiconductor company. Founded in 1999, ON Semiconductor specializes in designing and manufacturing a wide range of electronic components, including power management, analog, sensors, logic, and discrete devices. The company serves various industries, such as automotive, industrial, communications, and consumer electronics. ON Semiconductor focuses on providing energy-efficient solutions and has a strong commitment to sustainability and innovation in the semiconductor sector.

Application

The MJD44H11G is a high-performance N-channel MOSFET used in various applications, including power management, switching power supplies, motor control, and automotive electronics. It is suitable for use in DC-DC converters, lighting systems, and industrial automation due to its low on-resistance, high efficiency, and fast switching capabilities. Its robustness makes it ideal for both consumer and industrial applications.

Equivalent

The MJD44H11G is a N-channel MOSFET. Equivalent products include the IRF540, STP16NF06, and FQP30N06L. Ensure to check specifications like voltage, current ratings, and package type for compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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