MJD42CT4G

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MJD42CT4G

TRANS PNP 100V 6A DPAK

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Spécifications

Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType PNP
Current-Collector(Ic)(Max) 6 A
Voltage-CollectorEmitterBreakdown(Max) 100 V
VceSaturation(Max)@IbIc 1.5V @ 600mA, 6A
Current-CollectorCutoff(Max) 50µA
DCCurrentGain(hFE)(Min)@IcVce 15 @ 3A, 4V
Power-Max 1.75 W
Frequency-Transition 3MHz
OperatingTemperature -65°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-252-3, DPak (2 Leads + Tab), SC-63

Vue d'ensemble

Description

MJD42CT4G is a high-voltage N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for various power applications, including switching and amplification. This component features low on-resistance and fast switching speeds, making it suitable for efficient power management in devices like power converters, motor controllers, and LED drivers.
Key specifications typically include a breakdown voltage of around 40V, a continuous current rating (often around 30A), and a maximum power dissipation threshold. The MOSFET's construction allows for enhanced thermal performance and reliability in demanding environments.
MJD42CT4G is commonly used in automotive, industrial, and consumer electronics where efficient power handling is crucial. Its compact package and robust performance make it a popular choice among engineers and designers seeking reliable components for high-efficiency designs. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.

Features

The MJD42CT4G is a high-performance, N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of up to 40V.
2. Current Handling: Capable of handling continuous drain currents (I_D) around 40A, making it suitable for high-current applications.
3. Low R_DS(on): Offers a low on-resistance, typically in the range of 0.05 to 0.1 ohms, enhancing efficiency and reducing heat generation.
4. Fast Switching: Suitable for high-frequency switching applications due to its fast switching speeds.
5. Thermal Performance: Comes in a TO-220 package that aids in effective heat dissipation.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically between 1V to 2.5V, allowing for easy drive with standard gate voltages.
7. Applications: Commonly used in power supplies, motor drivers, and DC-DC converters.
Its robust specifications make it a popular choice for various electronic applications.

Package

The MJD42CT4G is a N-channel MOSFET packaged in a DPAK (TO-252) format. This package type features a surface-mount design, allowing for efficient thermal performance and ease of assembly in electronic circuits.

Pinout

The MJD42CT4G is a N-channel MOSFET transistor with a total of 3 pins. Its pin configuration and functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal where the current enters the MOSFET when it is in the "on" state.
3. Source (S): This pin is where current exits the MOSFET when it is conducting.
The MJD42CT4G is primarily used for switching applications in power management and amplification due to its high efficiency and fast switching capabilities. It is part of the N-channel MOSFET family, which is widely utilized in various electronic circuits.

Manufacturer

The MJD42CT4G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor develops and delivers a wide range of products, including analog, discrete, and power management semiconductors, as well as sensors and integrated circuits. The company serves various markets, including automotive, industrial, telecommunications, computing, and consumer electronics. ON Semiconductor is known for its focus on energy-efficient technologies and has a strong commitment to sustainability and innovation in the semiconductor industry.

Application

The MJD42CT4G is a power transistor primarily used in applications such as motor control, switching regulators, and audio amplifiers. It is suitable for low to medium power switching applications, including relay drivers and industrial automation systems. Its robust design allows for efficient operation in automotive and consumer electronics as well.

Equivalent

The MJD42CT4G is an N-channel MOSFET. Equivalent products include the IRF540, STP31NM60, and BSS138, among others. When selecting an equivalent, consider parameters like voltage, current, RDS(on), and package type to ensure compatibility with your specific application. Always verify specifications from the manufacturer's datasheets.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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