MJD32CT4G

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MJD32CT4G

TRANS PNP 100V 3A DPAK

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
TransistorType PNP
Current-Collector(Ic)(Max) 3 A
Voltage-CollectorEmitterBreakdown(Max) 100 V
VceSaturation(Max)@IbIc 1.2V @ 375mA, 3A
Current-CollectorCutoff(Max) 50µA
DCCurrentGain(hFE)(Min)@IcVce 10 @ 3A, 4V
Power-Max 1.56 W
Frequency-Transition 3MHz
OperatingTemperature -65°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-252-3, DPak (2 Leads + Tab), SC-63

Vue d'ensemble

Description

MJD32CT4G is a high-performance N-channel MOSFET designed for various applications including power management, motor control, and switching. It features low on-resistance (RDS(on)), which enhances efficiency by minimizing power loss during operation. This device typically supports high-speed switching and can handle significant voltage and current levels, making it suitable for both industrial and consumer electronic applications.
The MJD32CT4G is housed in a compact TO-220 package, facilitating effective heat dissipation, which is crucial for maintaining performance under load. Its gate threshold voltage is optimized for compatibility with various control circuits, enabling straightforward integration into systems.
Applications of the MJD32CT4G include power supplies, inverters, and automotive electronics. When selecting this MOSFET for a project, consider its thermal characteristics, maximum ratings, and switching speed to ensure it meets the requirements of your specific application.

Features

The MJD32CT4G is a quad N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It typically handles up to 30V, providing robust performance in low to medium voltage applications.
2. Current Capacity: The device can conduct significant current, making it suitable for high-power applications.
3. Low On-Resistance: This feature minimizes power loss and heat generation during operation, enhancing efficiency.
4. Fast Switching: The MJD32CT4G is designed for quick on-off switching, ideal for high-frequency applications.
5. Thermal Stability: It offers good thermal performance, allowing for reliable operation under varying temperatures.
6. Package Type: Usually available in a TO-220 package, facilitating easy mounting and heat dissipation.
These attributes make the MJD32CT4G suitable for use in power supplies, motor drivers, and other electronic circuits requiring efficient switching.

Package

The MJD32CT4G is typically packaged in a DPAK (TO-252) package type. This surface-mount package is designed for power MOSFETs and provides efficient thermal performance and compact size for various applications.

Pinout

The MJD32CT4G is a power MOSFET transistor with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin controls the switching of the MOSFET. A voltage applied here allows current to flow from the drain to the source.
2. Drain (D): This is the pin where the load is connected. The current flows out of this pin when the MOSFET is turned on.
3. Source (S): This pin is the terminal through which current enters when the MOSFET is conducted.
The MJD32CT4G is designed for high-speed switching applications and can handle significant current and voltage, making it suitable for various power management and switching applications.

Manufacturer

The MJD32CT4G is manufactured by ON Semiconductor, a global semiconductor company headquartered in Phoenix, Arizona. ON Semiconductor specializes in a wide range of semiconductor solutions, including power management, analog, and digital devices. The company serves various industries such as automotive, industrial, and consumer electronics. They focus on energy-efficient technologies and are committed to providing innovative products that support the growing demand for smart and connected devices.

Application

The MJD32CT4G is a four-channel high-speed MOSFET driver primarily used in power management applications. Its key application areas include motor control in automotive and industrial systems, LED lighting drivers, power supply circuits, and renewable energy systems like solar inverters. It is also suitable for driving high-frequency switching devices in various electronic circuits, enhancing efficiency and performance in power electronic designs.

Equivalent

The MJD32CT4G is an N-channel MOSFET typically used for switching applications. Equivalent products include the IRF3205, BSS138, and STP16NF06. Ensure to compare specifications such as voltage, current rating, and on-resistance to confirm compatibility for your specific application. Always consult the datasheets for detailed information.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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