MJD253T4G

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MJD253T4G

TRANS PNP 100V 4A DPAK

  • Fabricant
  • Mfr. Partie #MJD253T4G
  • Paquet DPAK-3
  • Fiche de données
  • En stock7239

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
TransistorType PNP
Current-Collector(Ic)(Max) 4 A
Voltage-CollectorEmitterBreakdown(Max) 100 V
VceSaturation(Max)@IbIc 600mV @ 100mA, 1A
Current-CollectorCutoff(Max) 100nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce 40 @ 200mA, 1V
Power-Max 1.4 W
Frequency-Transition 40MHz
OperatingTemperature -65°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-252-3, DPak (2 Leads + Tab), SC-63

Vue d'ensemble

Description

MJD253T4G is a type of power transistor, specifically a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in various electronic applications. It features high efficiency and fast switching capabilities, making it suitable for use in power supplies, motor drives, and switching regulators. The device operates at high voltages and can handle significant current levels, offering robust performance in demanding environments.
Key characteristics include its maximum voltage ratings, current handling capacity, and low on-resistance, which contribute to reduced power loss and increased thermal performance. Applications often include consumer electronics, industrial equipment, and automotive systems, where reliable and efficient power management is crucial.
For optimal performance, proper thermal management and circuit design are essential when integrating the MJD253T4G into electronic systems. Always refer to the manufacturer's datasheet for specific parameters and guidelines.

Features

The MJD253T4G is a high-performance N-channel MOSFET designed for various applications. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 55A, allowing it to manage significant power loads.
3. Low R_DS(on): With a low on-resistance (R_DS(on)), it ensures efficient power dissipation and minimal heat generation during operation.
4. Fast Switching Speed: It offers rapid switching capabilities, enhancing performance in high-frequency applications.
5. Thermal Performance: The package design supports efficient thermal management, ensuring reliable operation even under high load conditions.
6. Applications: Commonly used in power management, motor control, and switching circuits.
Overall, the MJD253T4G is ideal for applications requiring robust performance and efficiency in power handling.

Package

The MJD253T4G is typically packaged in a TO-220 form factor. This package type is known for its good thermal performance and is commonly used for power transistors and other high-power applications.

Pinout

The MJD253T4G is a NPN bipolar junction transistor (BJT) housed in a TO-220 package. It has a pin count of three. The pin functions are as follows:
1. Collector (C) - The output terminal where the current flows out of the transistor.
2. Base (B) - The control terminal that regulates the transistor's operation by allowing current to flow into the base, thereby controlling the collector-emitter current.
3. Emitter (E) - The input terminal where the current flows into the transistor from the load.
The MJD253T4G is commonly used for switching and amplification applications, with a maximum collector current of 15A and a collector-emitter voltage rating of 60V.

Manufacturer

The MJD253T4G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of electronic components, including analog and mixed-signal integrated circuits, discrete components, and power management solutions. The company serves various industries, such as automotive, industrial, communications, and consumer electronics, providing innovative technologies that enhance energy efficiency and connectivity. Established in 1999, ON Semiconductor has grown through acquisitions and now operates worldwide, focusing on sustainability and advanced semiconductor solutions.

Application

The MJD253T4G is a high-voltage NPN power transistor used in various applications, including switching power supplies, motor control, and audio amplification. It is suitable for high-frequency operations, making it ideal for consumer electronics, automotive applications, and industrial machinery. Its robust design allows it to handle significant power loads, contributing to efficiency in power management systems.

Equivalent

The MJD253T4G is a NPN power transistor. Equivalent products include:
1. TIP31C
2. MJE2955
3. 2N3055
4. BD139
5. TIP42C
Always verify specifications such as voltage, current ratings, and package types before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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