MJD122T4G

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MJD122T4G

TRANS NPN DARL 100V 8A DPAK

  • Fabricant
  • Mfr. Partie #MJD122T4G
  • Paquet SOT-252
  • Fiche de données
  • En stock7539

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
TransistorType NPN - Darlington
Current-Collector(Ic)(Max) 8 A
Voltage-CollectorEmitterBreakdown(Max) 100 V
VceSaturation(Max)@IbIc 4V @ 80mA, 8A
Current-CollectorCutoff(Max) 10µA
DCCurrentGain(hFE)(Min)@IcVce 1000 @ 4A, 4V
Power-Max 1.75 W
Frequency-Transition 4MHz
OperatingTemperature -65°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-252-3, DPak (2 Leads + Tab), SC-63

Vue d'ensemble

Description

MJD122T4G is a specific course code that typically refers to a module offered at various educational institutions. While the exact content may vary by institution, courses designated with such codes often focus on foundational concepts in a particular field, potentially related to subjects like business, technology, or social sciences. The curriculum usually includes lectures, discussions, and practical assignments, aimed at equipping students with essential skills and knowledge relevant to the subject matter.
Students can expect to engage in critical thinking, collaborative projects, and possibly case studies to deepen their understanding. Assessment methods may include examinations, presentations, and written assignments. For detailed information, including prerequisites, learning outcomes, and specific topics covered, it's best to consult the institution's course syllabus or academic catalog.

Features

The MJD122T4G is a high-performance N-channel MOSFET designed for various switching applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage of 60V, making it suitable for medium-voltage applications.
2. Current Rating: The MOSFET can handle continuous drain currents up to 30A, providing robust performance for power management tasks.
3. Low On-Resistance (RDS(on)): With a low on-resistance of approximately 0.058 ohms at VGS = 10V, it minimizes power loss during operation.
4. Fast Switching Speed: Designed for rapid switching, it enhances efficiency in high-frequency applications.
5. Thermal Stability: The package is designed to dissipate heat effectively, supporting operation in high-temperature environments.
6. TO-220 Package: Its TO-220 package allows for easy mounting and heat dissipation, ideal for PCB applications.
These features make the MJD122T4G suitable for power supplies, motor control, and other electronic circuits requiring efficient switching solutions.

Package

The MJD122T4G is typically packaged in a TO-220 form factor. This package type is designed for power transistors, providing efficient heat dissipation and easy mounting on heatsinks for enhanced thermal management.

Pinout

The MJD122T4G is a NPN power transistor housed in a TO-220 package. It has a total of three pins. The pin configuration and functions are as follows:
1. Base (B) - This is the control terminal that receives the input signal to turn the transistor on or off.
2. Collector (C) - This terminal is where the main current flows into the transistor from the power supply.
3. Emitter (E) - This terminal allows current to flow out of the transistor to the load.
The MJD122T4G is commonly used in switching and amplification applications, capable of handling high currents and voltages with a maximum collector current of 8A and a collector-emitter voltage of 60V.

Manufacturer

The MJD122T4G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in the design and production of a wide range of semiconductor components, including power management, analog, and digital ICs (integrated circuits). The company serves various industries such as automotive, industrial, consumer electronics, and communications. ON Semiconductor focuses on energy-efficient solutions and is involved in the development of technologies that support advanced applications like IoT (Internet of Things), automotive safety, and renewable energy systems.

Application

The MJD122T4G is a NPN power transistor commonly used in applications such as audio amplification, power switching, and motor control. It is suitable for high-frequency and high-power operations in consumer electronics, industrial equipment, and automotive systems. Its robust design allows for efficient performance in various electronic circuits requiring reliable switching and amplification.

Equivalent

The MJD122T4G is a NPN transistor commonly used in switching applications. Equivalent products include the TIP31C, BD139, and 2N3055, depending on the specific application requirements such as voltage, current rating, and package type. Ensure to check the datasheets for precise specifications and characteristics before substitution.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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