MGSF1N03LT1G

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MGSF1N03LT1G

MOSFET N-CH 30V 1.6A SOT23-3

  • Fabricant
  • Mfr. Partie #MGSF1N03LT1G
  • Paquet SOT23-3
  • Fiche de données
  • En stock5135

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 1.6A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 100mOhm @ 1.2A, 10V
Vgs(th)(Max)@Id 2.4V @ 250µA
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 140 pF @ 5 V
PowerDissipation(Max) 420mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Vue d'ensemble

Description

MGSF1N03LT1G typically refers to a specific course code in a university or educational institution, likely related to finance, investment, or a similar field. The course aims to introduce students to foundational concepts in financial markets, investment strategies, and financial instruments.
Key topics may include understanding market structures, risk assessment, portfolio management, and the role of financial institutions. Students will often engage with case studies, practical applications, and analytical tools to enhance their understanding of how financial markets operate.
The course may also cover ethical considerations and regulatory environments affecting financial practices. Overall, MGSF1N03LT1G is designed to equip students with the essential knowledge and skills required for further studies in finance or careers in the financial sector.

Features

The MGSF1N03LT1G is an N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, suitable for low-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 1.3A, making it effective for switching applications.
3. R_DS(on): The on-resistance is low, typically around 0.75 ohms, which enhances efficiency and reduces power loss during operation.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage ranges from 1V to 2.5V, allowing for effective control with low gate drive voltages.
5. Package Type: It is available in a compact SOT-23 package, facilitating space-saving designs on PCBs.
6. Applications: Suitable for use in power management circuits, DC-DC converters, and other switching applications due to its fast switching speed and reliability.
These features make the MGSF1N03LT1G an ideal choice for various electronic applications requiring efficient power switching.

Package

The MGSF1N03LT1G is typically packaged in a DPAK (TO-252) form factor. This package type is designed for surface mounting and provides good thermal performance and power handling capabilities.

Pinout

The MGSF1N03LT1G is a N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): Controls the MOSFET operation; applying a voltage here allows current to flow from drain to source.
2. Drain (D): The terminal through which the current flows out when the MOSFET is on.
3. Source (S): The terminal through which the current flows into the MOSFET.
This device is typically used in low-voltage applications, switching circuits, and power management systems, providing efficient performance with low on-resistance and fast switching capabilities.

Manufacturer

The MGSF1N03LT1G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor designs and produces a wide range of products, including power management, imaging, analog, and logic devices, serving various industries such as automotive, communications, computing, and consumer electronics. The company focuses on providing energy-efficient solutions and has a strong emphasis on innovation in semiconductor technologies.

Application

The MGSF1N03LT1G is a N-channel MOSFET used primarily in power management applications. Its application areas include DC-DC converters, motor control, LED lighting, and power switching in consumer electronics. It is suitable for high-frequency and high-efficiency designs, providing improved thermal performance and reduced conduction losses.

Equivalent

The MGSF1N03LT1G is an N-channel MOSFET. Equivalent products include the BSS123, IRF630, and MGSF1N03L. However, it's crucial to check specific parameters such as voltage, current ratings, and on-resistance for compatibility in your application. Always confirm with the datasheets before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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