MC33151DR2G

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MC33151DR2G

IC GATE DRVR LOW-SIDE 8SOIC

  • Fabricant
  • Mfr. Partie #MC33151DR2G
  • Paquet 8-SOIC
  • Fiche de données
  • En stock6740

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
DrivenConfiguration Low-Side
ChannelType Independent
NumberofDrivers 2
GateType N-Channel MOSFET
Voltage-Supply 6.5V ~ 18V
LogicVoltage-VILVIH 0.8V, 2.6V
Current-PeakOutput(SourceSink) 1.5A, 1.5A
InputType Inverting
Rise/FallTime(Typ) 31ns, 32ns
OperatingTemperature -40°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Vue d'ensemble

Description

The MC33151DR2G is a dual high-speed MOSFET driver by ON Semiconductor. It is designed to provide efficient and reliable switching for power MOSFETs and insulated gate bipolar transistors (IGBTs). Key features include fast rise and fall times, high current driving capability, and a wide operating voltage range, making it suitable for applications requiring quick and efficient switching, such as power supplies, motor control, and other power management tasks.
With its dual configuration, the MC33151DR2G can independently drive two MOSFETs, reducing component count and enhancing system compactness. The device is available in an SOIC-8 package, facilitating easy integration into a variety of circuit designs. Protection features, such as undervoltage lockout, ensure safe operation within specified voltage limits.
Overall, the MC33151DR2G is a versatile and robust solution for applications necessitating precise and high-speed MOSFET driving capabilities.

Features

The MC33151DR2G is a high-speed dual MOSFET driver designed to provide efficient and reliable operation in various applications. Key features include:
1. High-Speed Performance: Capable of driving MOSFETs and IGBTs with fast switching speeds, enhancing system efficiency.
2. Wide Operating Voltage Range: Supports a voltage range from 4.5V to 18V, making it versatile for different circuit requirements.
3. Output Current: Offers a peak output current of 1.5A, enabling effective driving of power transistors.
4. Low Propagation Delay: Features a low delay time, ensuring rapid response in switching applications.
5. Inverting and Non-Inverting Configurations: Provides flexibility with both inverting and non-inverting input options.
6. Thermal Protection: Includes built-in thermal shutdown protection to prevent overheating and ensure system safety.
7. Compact Package: Available in an SOIC-8 package, allowing for space-efficient designs.
8. Latch-Up Immunity: Designed to withstand latch-up events, improving reliability in harsh conditions.
These features make the MC33151DR2G suitable for applications such as power supplies, motor drives, and other systems requiring efficient MOSFET or IGBT driving capabilities.

Package

The MC33151DR2G is a high-speed dual MOSFET driver IC typically found in a surface-mount SOIC-8 (Small Outline Integrated Circuit) package. This package type is compact and suitable for automated assembly processes.

Pinout

The MC33151DR2G is a dual high-speed driver with a pin count of 8. It is designed for driving MOSFETs and IGBTs in high-frequency switching applications, such as power supplies and motor controls. The MC33151DR2G features two independent drivers within a single package, providing efficient and reliable performance.
Key functions include:
- Fast rise and fall times for efficient switching.
- High peak output current capability.
- Low output impedance to ensure minimal switching losses.
- Wide operating voltage range to accommodate various power levels.
- Built-in protection features, such as undervoltage lockout, to enhance reliability.
The MC33151DR2G is commonly used in applications requiring fast and robust gate driving capabilities, making it ideal for use in power electronics and related fields.

Manufacturer

The MC33151DR2G is a product manufactured by ON Semiconductor, now known as onsemi. onsemi is a leading semiconductor supplier focused on intelligent power and sensing technologies, primarily serving sectors such as automotive, industrial, and consumer electronics. The company provides a broad range of products including power management devices, sensors, and connectivity solutions aimed at improving energy efficiency and enabling sustainable technology developments.

Application

The MC33151DR2G is a high-speed dual MOSFET driver used in various applications such as switch-mode power supplies, motor control, and DC-DC converters. It is ideal for driving MOSFETs in applications requiring fast switching speeds and efficient power management. Additionally, it can be used in pulse transformer drive circuits and other power electronic systems where quick and efficient MOSFET driving is essential.

Equivalent

Equivalent products to the MC33151DR2G chip include:
1. Texas Instruments SN75176B
2. MAX1487 from Maxim Integrated
3. AM26C31C from Texas Instruments
4. SN65HVD3082E from Texas Instruments
These chips perform similar functions in terms of RS-485 transceiver capabilities. Always check the datasheet for specific electrical characteristics and pin configurations to ensure compatibility with your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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