M29W640GL70NB6E

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M29W640GL70NB6E

IC FLASH 64MBIT PARALLEL 56TSOP

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  • Mfr. Partie #M29W640GL70NB6E
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Spécifications

Part Status Obsolete
DigiKey Programmable Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 64Mbit
Memory Organization 8M x 8, 4M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 70ns
Access Time 70 ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 56-TSOP
Base Product Number M29W640

Vue d'ensemble

Description

The M29W640GL70NB6E is a 64 Megabit (8 Megabyte) Flash memory chip from STMicroelectronics, utilizing the NAND technology. It is designed for high-performance applications requiring non-volatile storage. The device features a 70 ns access time, enabling fast read operations, and supports a wide range of programming and erasing options.
Key specifications include a supply voltage of 2.7V to 3.6V, and it operates with a standard parallel interface, making it compatible with various microcontrollers and processors. The M29W640GL70NB6E supports multiple memory modes which optimize performance for different use cases, such as code shadowing or data storage.
Applications include consumer electronics, automotive systems, and industrial controls, where reliable and efficient data storage is crucial. With its robust architecture, the M29W640GL70NB6E offers durability and longevity, making it suitable for both embedded and standalone systems.

Features

The M29W640GL70NB6E is a 64Mb (8MB) Flash memory chip from STMicroelectronics. It features a single voltage operation of 2.7V to 3.6V, making it suitable for battery-powered applications. This device uses a NAND Flash memory architecture and offers fast read speeds of up to 70 ns.
Key features include:
- Memory Density: 64Mb (8MB)
- Access Times: Fast read access time of 70 ns
- Interface: Parallel interface with a multiplexed address and data bus
- Endurance: Approximately 100,000 write/erase cycles
- Data Retention: Retains data for 20 years at 55°C
- Package Options: Available in various packages including TSOP and BGA for flexible integration
- Programming: Supports sector erase and byte write operations
This chip is ideal for applications in consumer electronics, automotive systems, and industrial controls requiring reliable non-volatile memory.

Package

The M29W640GL70NB6E is packaged in a TSOP (Thin Small Outline Package) format, specifically a 48-pin TSOP.

Pinout

The M29W640GL70NB6E is a 64 Megabit (8 Megabyte) flash memory device with a pin count of 48. It features a dual-bank architecture, allowing for flexible memory management. The primary functions of this device include:
- Data Storage: Non-volatile memory for storing code and data.
- Read/Program/Erase Operations: Supports standard read, program, and block erase operations for data manipulation.
- Parallel Interface: Communicates with microcontrollers and other devices through a parallel interface.
- Sector and Block Erase: Allows for erasing in sectors or blocks to facilitate efficient memory management.
This device is commonly used in applications such as embedded systems, consumer electronics, and automotive controls due to its reliable performance and data retention capabilities.

Manufacturer

The M29W640GL70NB6E is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in the design and production of a wide range of semiconductor solutions, including microcontrollers, memories, sensors, and power management devices. The company serves various markets such as automotive, industrial, personal electronics, and communications. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is known for its innovative technologies and commitment to research and development in the semiconductor industry.

Application

The M29W640GL70NB6E is a 64Mbit (8MB) flash memory device commonly used in applications such as automotive electronics, consumer electronics, industrial control systems, and telecommunications. It serves for code storage, firmware updates, and data retention in devices like embedded systems, digital cameras, set-top boxes, and networking equipment, where durability and high-speed data access are essential.

Equivalent

The M29W640GL70NB6E chip is a 64Mb (8MB) Flash memory device. Equivalent products include:
1. AT29LV640 - 64Mb Flash from Microchip.
2. W29C640 - 64Mb Flash from Winbond.
3. S29GL064N - 64Mb Flash from Cypress.
4. MT29F640G - 64Mb Flash from Micron.
Always verify specifications for compatibility in your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

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