LM5109BSDX

Les images sont à titre de référence seulement

LM5109BSDX

IC GATE DRVR HALF-BRIDGE 8WSON

  • Fabricant
  • Mfr. Partie #LM5109BSDX
  • Paquet
  • Fiche de données
  • En stock6381

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Part Status Obsolete
DigiKey Programmable Not Verified
Driven Configuration Half-Bridge
Channel Type Independent
Number of Drivers 2
Gate Type MOSFET (N-Channel)
Voltage - Supply 8V ~ 14V
Logic Voltage - VIL, VIH 0.8V, 2.2V
Current - Peak Output (Source, Sink) 1A, 1A
Input Type Non-Inverting
Rise / Fall Time (Typ) 15ns, 15ns
Operating Temperature -40°C ~ 125°C (TJ)
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad
Supplier Device Package 8-WSON (4x4)
Base Product Number LM5109
High Side Voltage - Max (Bootstrap) 108 V

Vue d'ensemble

Description

The LM5109BSDX is a high-performance half-bridge gate driver from Texas Instruments. It is designed to drive both the high-side and low-side N-channel MOSFETs in a half-bridge configuration, which is commonly used in DC-DC converters, inverters, and motor drivers. This driver is optimized to handle fast-switching applications with its ability to provide high peak currents and short propagation delays. The LM5109BSDX features a floating high-side driver to accommodate the high voltage level of the half-bridge circuitry, and it operates over a wide voltage range, making it versatile for various applications.
Key features include a bootstrap diode integrated into the driver, which simplifies the design by reducing the number of external components needed. It also offers protection features such as undervoltage lockout (UVLO) to ensure safe operation by preventing the driver from operating under insufficient voltage conditions. The device is available in a thermally efficient package, which helps manage the heat dissipation in high power applications. Its reliability and robust performance make it suitable for challenging environments where efficient power delivery is critical.

Features

The LM5109BSDX is a high-performance MOSFET gate driver designed for half-bridge and synchronous buck applications. Key features include:
1. High-Speed Operation: It is capable of driving both high-side and low-side N-channel MOSFETs rapidly, offering fast switching speeds.
2. Bootstrap Diode: An integrated bootstrap diode allows for efficient high-side driver supply voltage generation, simplifying circuit design.
3. Low Propagation Delay: The device provides low propagation delays and fast rise and fall times, enhancing overall system efficiency.
4. Wide Input Voltage Range: It supports a wide input voltage range, making it versatile for various applications.
5. Under-Voltage Lockout (UVLO): Ensures the device operates only when supply voltages are within specified limits, protecting against undervoltage conditions.
6. Shoot-Through Protection: The design includes features to prevent simultaneous conduction of high-side and low-side MOSFETs, avoiding shoot-through currents.
7. Thermal Protection: Built-in thermal shutdown prevents damage due to overheating.
8. Compact Package: Available in a compact, thermally efficient package suitable for space-constrained applications.
These features make the LM5109BSDX suitable for applications such as power supply converters, motor drives, and other systems requiring efficient high-speed switching.

Package

The LM5109BSDX is typically available in a WSON (Wafer Scale Outline No-leads) package. This type of packaging is compact and suitable for high-density circuit designs, providing efficient thermal performance and electrical characteristics.

Pinout

The LM5109BSDX is a high-voltage gate driver IC from Texas Instruments, designed for driving N-channel MOSFETs in a half-bridge configuration. It features a 10-pin WSON (VSON) package. Here's a brief overview of its pin functions:
1. HB (High-Side Bootstrap Supply): Provides power to the high-side gate driver.
2. HO (High-Side Output): Drives the gate of the high-side MOSFET.
3. HS (High-Side Source): Connects to the source of the high-side MOSFET and acts as the return path for the high-side driver.
4. HI (High-Side Input): Controls the high-side MOSFET.
5. LI (Low-Side Input): Controls the low-side MOSFET.
6. VDD (Supply Voltage): Provides the supply voltage for the low-side and logic sections.
7. LO (Low-Side Output): Drives the gate of the low-side MOSFET.
8. VSS (Ground): Ground reference for the device.
9. NC (No Connect): Not internally connected.
10. UVO (Under-Voltage Lockout): Ensures the driver operates only at the correct voltage levels.
This configuration ensures efficient driving of MOSFETs in applications requiring high-speed switching and robust performance.

Manufacturer

The LM5109BSDX is manufactured by Texas Instruments (TI). Texas Instruments is a global technology company that designs and manufactures semiconductors and various integrated circuits. They are one of the largest manufacturers of analog and embedded processing components, serving industries such as automotive, industrial, personal electronics, communications equipment, and enterprise systems. TI focuses on developing innovations that facilitate advancements in electronics and technology solutions.

Application

The LM5109BSDX is a high-voltage gate driver IC primarily used in applications requiring efficient and reliable driving of MOSFETs or IGBTs. Common application areas include power supply units, motor drives, DC-DC converters, and other industrial applications where isolated or non-isolated high-side and low-side gate drivers are essential. Its ability to manage high voltages and minimize switching losses makes it suitable for renewable energy systems and various automotive applications, such as electric vehicle inverters and battery management systems.

Equivalent

The LM5109BSDX is a high-voltage half-bridge gate driver from Texas Instruments. Equivalent products are typically those with similar specifications and functionality. Some alternatives could include:
1. UCC27712 from Texas Instruments
2. IR2110 from Infineon Technologies
3. FAN7392 from ON Semiconductor
4. L6384E from STMicroelectronics
Always verify pin compatibility and electrical specifications before selecting an equivalent.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire