K4S511632D-UC75

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K4S511632D-UC75

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  • Mfr. Partie #K4S511632D-UC75
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Spécifications

Manufacturer Samsung Electro-Mechanics
Package 54TSOP-II

Vue d'ensemble

Description

The K4S511632D-UC75 is a 256Mbit (32MB) DDR SDRAM (Double Data Rate Synchronous Dynamic Random-Access Memory) designed for high-performance applications. It comes in a 32-bit data width and operates at a voltage of 2.5V. This memory chip is organized as 4M x 16 bits, making it suitable for various multimedia and computing tasks.
Key features include a data rate of up to 400 MT/s (megatransfers per second), which enhances data throughput and overall system performance. The chip is packaged in a standard TSOP-II (Thin Small Outline Package) format, facilitating easy integration into circuit boards.
The K4S511632D-UC75 offers advanced power-saving modes, making it energy-efficient, and supports burst mode operation, which improves sequential data access speeds. It is commonly used in consumer electronics, mobile devices, and computer systems where reliable and fast memory access is crucial.

Features

The K4S511632D-UC75 is a DRAM (Dynamic Random Access Memory) chip manufactured by Samsung. It features a 512Mb capacity with a 16M x 32-bit organization, designed for high-performance applications. This memory operates at a frequency of 75 MHz and complies with the DDR (Double Data Rate) SDRAM standard, allowing for data transfer on both the rising and falling edges of the clock signal, effectively doubling the data throughput compared to traditional SDRAM.
Key features include:
- Voltage Supply: Typically operates at 2.5V.
- Access Time: Offers low latency, enhancing performance in memory-intensive tasks.
- Package Type: Available in a 54-pin TSOP-II package, facilitating easy integration into various electronic devices.
- Low Power Consumption: Designed to reduce energy usage, making it suitable for mobile and portable applications.
Overall, the K4S511632D-UC75 is ideal for consumer electronics, networking devices, and other applications where efficient memory performance is critical.

Package

The K4S511632D-UC75 is packaged in a 66-pin TSOP II (Thin Small Outline Package). This package type is designed for surface mounting with a compact footprint, suitable for various electronic applications.

Pinout

The K4S511632D-UC75 is a 512 Mb (megabit) DDR SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) chip. It is organized as 64M x 16 bits and comes in a 54-pin TSOP II package.
Here's a brief overview of its pin count and functions:
- Pin Count: 54 pins
- Key Functions:
- Data Pins (DQ): 16 pins for data I/O.
- Address Pins (A): Used to select memory addresses.
- Control Pins: Includes clock (CLK), chip enable (CE), write enable (WE), and other control signals for operation management.
- Power Pins: For power supply (VDD) and ground (VSS).

This chip operates with a power supply voltage of 2.5V and is designed for high-speed memory applications, supporting data rates up to 400 MT/s (megatransfers per second).

Manufacturer

The K4S511632D-UC75 is manufactured by Samsung Electronics, a South Korean multinational conglomerate. Samsung is primarily known for its consumer electronics, including smartphones, televisions, and home appliances. However, it is also a major player in the semiconductor industry, producing a wide range of memory products such as DRAM, NAND flash, and system LSI (large-scale integration) chips. Founded in 1938, Samsung has evolved into one of the largest technology companies globally, recognized for its innovation and extensive research and development efforts in various sectors, including electronics, telecommunications, and digital media. The K4S511632D-UC75 specifically is a type of DRAM (Dynamic Random Access Memory) chip used in various electronic devices.

Application

The K4S511632D-UC75 is a 64Mb DRAM memory chip typically used in applications such as mobile devices, digital cameras, and consumer electronics. It is suitable for graphics processing, data buffering, and embedded systems that require reliable high-speed memory. Its low power consumption makes it ideal for battery-operated devices.

Equivalent

The K4S511632D-UC75 is a 512Mb (64MB) DDR SDRAM chip. Equivalent products include:
1. K4S511632D-UC75 (Samsung)
2. MT48LC16M16A2P-75 (Micron)
3. Hynix HY57V281620HTP-75
4. Nanya NT5TU32M16FG-75
Ensure compatibility with the specific application when selecting alternatives.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

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