K4B4G1646E-BCNB

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K4B4G1646E-BCNB

4Gbit 1.425V~1.575V 1.066GHz DDR3 SDRAM FBGA-96 Memory (ICs) RoHS

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Spécifications

Packaging FBGA-96
Clock Frequency 1.066GHz
Current - Supply 120mA
Memory Format DDR3 SDRAM
Memory Size 4Gbit
Operating temperature 0℃~+95℃
Refresh Current 2mA
Voltage - Supply 1.425V~1.575V

Vue d'ensemble

Description

K4B4G1646E-BCNB is a specific type of DRAM (Dynamic Random Access Memory) chip produced by Samsung. It is part of the DDR (Double Data Rate) memory family, which is widely used in various electronic devices, including computers and smartphones. This particular model typically features a 1GB capacity and operates at a voltage of 1.8V, adhering to the standards set for low-power applications.
Key characteristics of K4B4G1646E-BCNB include a high-speed interface, allowing for efficient data transfer rates, and compatibility with various memory architectures. Its design is optimized for performance in both consumer and industrial applications. The chip is often used in systems requiring reliable memory solutions without sacrificing power efficiency.
Overall, K4B4G1646E-BCNB represents a balance between performance, capacity, and power consumption in the realm of memory technology.

Features

The K4B4G1646E-BCNB is a DRAM (Dynamic Random-Access Memory) component from Samsung, specifically a 4 Gb (Gigabit) DDR3 SDRAM. Key features include:
1. Density: 4 Gb capacity, ideal for various applications like mobile devices and laptops.
2. Data Rate: Supports DDR3 data rates up to 1600 MT/s (Mega Transfers per second).
3. Bus Width: 16-bit I/O, enabling efficient data transfer and performance.
4. Interface: Utilizes a double data rate interface for increased data throughput.
5. Power Efficiency: Operates at a voltage of 1.5V, making it power-efficient compared to older DDR generations.
6. Package Type: Typically available in a compact FBGA (Fine Ball Grid Array) package, suitable for high-density applications.
7. Thermal Characteristics: Designed to operate within a wide temperature range, ensuring reliability in various environments.
These features make the K4B4G1646E-BCNB suitable for modern computing applications requiring efficient and high-performance memory solutions.

Package

The K4B4G1646E-BCNB is a DRAM chip packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) package. This compact format is designed for efficient thermal management and space-saving in electronic applications.

Pinout

The K4B4G1646E-BCNB is a 4Gb (Gigabit) DDR3 SDRAM memory chip produced by Samsung. It features a pin count of 78 pins in a TSOP-II (Thin Small Outline Package) configuration.
The primary function of this memory chip is to serve as volatile memory in various applications, such as computers, servers, and other electronic devices that require high-speed data processing. This DDR3 memory operates at a voltage of 1.5V and supports data rates of up to 1600 MT/s (million transfers per second). The chip is organized as 512Mx8 bits, allowing it to efficiently handle data storage and retrieval in the specified applications.
In summary, the K4B4G1646E-BCNB is a 78-pin DDR3 SDRAM memory device designed for high-performance computing with a focus on speed and efficiency.

Manufacturer

The K4B4G1646E-BCNB is manufactured by Samsung Electronics, a South Korean multinational electronics company. Samsung is one of the largest technology companies in the world, known for its wide range of products, including semiconductors, consumer electronics, and telecommunications equipment. The company is a major player in the semiconductor industry, particularly in the production of DRAM and NAND flash memory. Samsung Electronics is part of the larger Samsung Group, which encompasses various sectors, including finance, construction, and shipbuilding. The company is recognized for its innovation and investment in research and development, making significant contributions to advancements in technology.

Application

The K4B4G1646E-BCNB is a 4GB DDR3 SDRAM memory module primarily used in applications such as laptops, desktops, and servers. It is suitable for consumer electronics, mobile devices, and gaming systems, providing efficient performance for multitasking and data-intensive applications. Its low power consumption makes it ideal for energy-sensitive devices.

Equivalent

The K4B4G1646E-BCNB is a DDR3 SDRAM memory chip. Equivalent products include:
1. MT41K256M16HA-125E
2. H5TQ2G83CFR
3. IS43TR16640B-125B
Always check for specific characteristics such as speed, voltage, and capacity to ensure compatibility.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

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