K4B1G1646I-BYMA

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K4B1G1646I-BYMA

1.35V 1Gbit DDR3 SDRAM BGA Memory (ICs) RoHS

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  • Mfr. Partie #K4B1G1646I-BYMA
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  • En stock12087

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Spécifications

Packaging BGA
Memory Format DDR3 SDRAM
Memory Size 1Gbit
Operating temperature 0℃~+85℃
Voltage - Supply 1.35V

Vue d'ensemble

Description

K4B1G1646I-BYMA is a specific model of NAND flash memory chip produced by Samsung. It typically features a capacity of 1 gigabit (Gb) and is often used in various applications, including mobile devices, consumer electronics, and embedded systems. The "K4B" prefix indicates it belongs to Samsung's family of memory products, while "I" denotes the type of memory technology used. The "BYMA" part of the designation often refers to the specific product version or configuration.
This chip offers advantages such as low power consumption, high speed, and reliability, making it suitable for both read and write operations in data storage solutions. It is crucial in applications where compact size and efficiency are required, contributing to enhanced device performance and user experience. As part of the broader NAND flash memory market, K4B1G1646I-BYMA aligns with trends toward increasing data storage capacities and faster access times in modern technology.

Features

The K4B1G1646I-BYMA is a DRAM chip produced by Samsung, featuring 1 Gigabit (Gb) capacity and designed for mobile applications. It utilizes a DDR3 (Double Data Rate 3) interface, offering data rates of up to 1066 Mbps. This memory chip is built on a 8-bit I/O architecture, complying with the JEDEC standards for mobile DRAM.
Key features include:
- Low Voltage Operation: Typically operates at 1.2V, enhancing power efficiency.
- High Density: 1Gb density allows for versatile use in various mobile devices.
- Temperature Range: Supports a wide operating temperature range, suitable for rugged applications.
- Compact Package: Available in a small FBGA (Fine Ball Grid Array) package, aiding in space-constrained designs.
This chip is ideal for smartphones, tablets, and other portable electronics, balancing performance and power efficiency.

Package

The K4B1G1646I-BYMA is packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) format. This type of package is designed for high-density applications, providing a compact footprint and excellent thermal performance.

Pinout

The K4B1G1646I-BYMA is a DRAM (Dynamic Random Access Memory) chip manufactured by Samsung. It is a 1Gb (Gigabit) DDR3 SDRAM device organized as 1G x 16 bits. This chip typically comes in a 78-ball BGA (Ball Grid Array) package.
In terms of pin count, the K4B1G1646I-BYMA features 78 pins. The functions of these pins include data input/output, address input, control signals, power supply, and ground connections. The primary functions are delineated as follows:
- Data Pins: 16 data input/output pins (DQ0-DQ15)
- Address Pins: Used for accessing specific memory locations.
- Control Pins: Includes signals like CS (Chip Select), RAS (Row Address Strobe), CAS (Column Address Strobe), and WE (Write Enable).
- Power Supply: VDD and VSS pins for power and ground.
This chip is suitable for various applications, including servers, desktops, and laptops, due to its high speed and efficiency.

Manufacturer

The K4B1G1646I-BYMA is manufactured by Samsung Electronics, a South Korean multinational electronics company. Samsung is a leading manufacturer in various sectors, including semiconductors, consumer electronics, and telecommunications. Founded in 1938, it has grown to become one of the largest and most influential technology companies in the world, known for its innovation and extensive product range, including smartphones, televisions, and memory chips. Samsung's semiconductor division is a major global player, producing memory and storage solutions for a wide range of applications, including smartphones, computers, and servers.

Application

The K4B1G1646I-BYMA is a 1GB DDR3 SDRAM memory chip primarily used in applications such as smartphones, tablets, laptops, and other portable devices. Its low power consumption and high-speed data transfer capabilities make it suitable for consumer electronics, automotive systems, and industrial applications that require efficient memory solutions.

Equivalent

The K4B1G1646I-BYMA chip is a 1GB DDR3 SDRAM. Equivalent products include:
1. K4B1G1646C-BYMA (similar specs, slight variations in speed)
2. MT41K1G16HA-125 (Micron)
3. H5TQ1G83EFR-PBA (Hynix)
Ensure to verify compatibility based on specific application requirements such as voltage, speed, and timing parameters before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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2. Carte de crédit/débit

3. Transfert bancaire

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