K4A8G165WC-BCWE

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K4A8G165WC-BCWE

8Gbit 1.14V~1.26V 1.333GHz DDR4 SDRAM FBGA-96 Memory (ICs) RoHS

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Spécifications

Packaging FBGA-96
Clock Frequency 1.333GHz
Memory Format DDR4 SDRAM
Memory Size 8Gbit
Operating temperature 0℃~+95℃
Voltage - Supply 1.14V~1.26V

Vue d'ensemble

Description

The K4A8G165WC-BCWE is a 2GB DDR3 SDRAM memory module produced by Samsung, designed for use in various electronic applications, including computers and mobile devices. It operates at a data rate of 1600 MT/s and supports a 64-bit data bus. This memory chip features a voltage range of 1.35V, making it energy-efficient and suitable for low-power applications.
Key specifications include a package type of FBGA (Fine Ball Grid Array) and a density of 2GB. The chip is compliant with JEDEC standards, ensuring compatibility with a wide range of systems. Designed for high performance and reliability, it is often used in laptops, desktops, and servers, enhancing system speed and responsiveness. Additionally, it is ideal for applications requiring fast data processing and multitasking capabilities.
Overall, the K4A8G165WC-BCWE is a versatile and efficient memory solution for modern computing needs.

Features

The K4A8G165WC-BCWE is a type of DRAM (Dynamic Random Access Memory) module, specifically a DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip. Key features include:
- Capacity: 1 GB
- Organization: 1G x 8 bits
- Speed: Operates at a frequency of 1600 MT/s (Mega Transfers per second).
- Voltage: Typically operates at 1.5V, with some support for 1.35V (DDR3L) for low power applications.
- Package Type: Comes in a 78-ball FBGA (Fine Ball Grid Array) package, which is compact and efficient for space-constrained designs.
- Data Rate: Supports a data rate of up to 1600 Mbps per pin.
This chip is suitable for various consumer and industrial applications, including desktops, laptops, and embedded systems, where efficient memory performance is required.

Package

The K4A8G165WC-BCWE is a DRAM memory chip packaged in a 78-ball FBGA (Fine Ball Grid Array) format. This packaging provides a compact design suitable for high-density memory applications, often found in mobile devices and consumer electronics.

Pinout

The K4A8G165WC-BCWE is a DRAM memory chip from Samsung, specifically a DDR4 SDRAM component. It typically features a 78-ball configuration, aligning with the BGA (Ball Grid Array) package type. This chip has a capacity of 8 gigabits (1 GB) and operates at a voltage of 1.2V.
The primary functions of this memory chip include serving as volatile storage for data and instructions in computing devices, ensuring high-speed access and efficient processing. It supports various data rates and is designed for applications needing high performance and bandwidth, such as laptops, desktops, and servers. The K4A8G165WC-BCWE is characterized by its low power consumption, which is crucial for energy-efficient designs.

Manufacturer

The K4A8G165WC-BCWE is a DRAM (Dynamic Random-Access Memory) chip manufactured by Samsung Electronics. Samsung is a South Korean multinational conglomerate and is one of the largest technology companies in the world. It is primarily known for its consumer electronics, such as smartphones, televisions, and home appliances, as well as its semiconductor business, which includes memory chips like DRAM and NAND flash. Samsung Electronics plays a crucial role in the global semiconductor market, supplying components for various devices and systems, and is a leader in innovation, research, and development within the tech industry.

Application

The K4A8G165WC-BCWE is a 1GB DDR3 SDRAM memory chip commonly used in various applications, including smartphones, tablets, laptops, and other portable electronic devices. Its features make it suitable for high-performance computing, gaming, and multimedia devices, where fast data processing and efficient power consumption are essential. Additionally, it may be utilized in networking equipment and embedded systems.

Equivalent

The K4A8G165WC-BCWE is a 1GB DDR3 SDRAM chip. Equivalent products include:
1. Hynix H5TQ2G63AFR
2. Micron MT41K128M16HA
3. Samsung K4B2G1646B
4. Nanya NT5CB256M16DP-133
Ensure compatibility in terms of voltage, speed, and pin configuration when selecting alternatives.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

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