K4A4G165WF-BCWE

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K4A4G165WF-BCWE

4Gbit 1.2V 1.6GHz DDR4 SDRAM FBGA-96 Memory (ICs) RoHS

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  • Mfr. Partie #K4A4G165WF-BCWE
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Spécifications

Packaging FBGA-96
Clock Frequency 1.6GHz
Memory Format DDR4 SDRAM
Memory Size 4Gbit
Operating temperature 0℃~+85℃
Voltage - Supply 1.2V

Vue d'ensemble

Description

The K4A4G165WF-BCWE is a 4GB DDR4 SDRAM (Synchronous Dynamic Random Access Memory) chip developed by Samsung. It is designed for high-performance applications, commonly used in smartphones, tablets, and other mobile devices. The memory operates at a voltage of 1.2V, contributing to energy efficiency and lower power consumption compared to earlier DDR generations.
With a data transfer rate of up to 2400 MT/s (megatransfers per second), it ensures quick read and write operations, enhancing overall device performance. The device comes in a small form factor, typically in a BGA (Ball Grid Array) package, facilitating integration into compact electronic designs.
The K4A4G165WF-BCWE is built with advanced manufacturing processes, ensuring reliability and durability under various operating conditions. It supports various features like burst read/write modes, which optimize data throughput and efficiency, making it a suitable choice for modern computing and mobile applications.

Features

The K4A4G165WF-BCWE is a DRAM memory chip from Samsung, specifically designed for mobile applications. Here are its key features:
1. Type: LPDDR4 (Low Power Double Data Rate 4) memory, which provides efficient power consumption and high performance.
2. Capacity: 4GB (Gigabytes), suitable for modern mobile devices requiring substantial memory.
3. Data Rate: Supports a data rate of up to 3200 MT/s (megatransfers per second), enabling fast data processing.
4. Package: Available in a compact package type, ideal for space-constrained mobile designs.
5. Voltage: Operates at a low voltage of 1.1V, contributing to energy efficiency and prolonging battery life in portable devices.
6. Architecture: Utilizes a 16-bit I/O interface, enhancing bandwidth and overall system performance.
7. Applications: Commonly used in smartphones, tablets, and other mobile devices requiring high-speed memory solutions.
These features make the K4A4G165WF-BCWE a reliable choice for enhancing the performance of mobile computing systems.

Package

The K4A4G165WF-BCWE is a 4Gb DDR3 SDRAM memory chip packaged in a Fine-Pitch Ball Grid Array (FBGA) form factor. This compact packaging allows for efficient space utilization and high-density applications in electronic devices.

Pinout

The K4A4G165WF-BCWE is a DRAM memory chip produced by Samsung, specifically a 4Gb DDR4 SDRAM device. It comes in a 78-ball FBGAA (Fine Pitch Ball Grid Array) package. The pin count for this device is 78 balls.
The primary functions of the K4A4G165WF-BCWE include serving as volatile memory for data storage in various electronic devices such as computers, servers, and mobile devices. It operates at a voltage of 1.2V and supports various data rates, providing efficient performance for high-speed applications. The device is designed for use in memory modules like DIMMs and SoDIMMs, making it suitable for both desktop and laptop configurations.

Manufacturer

The K4A4G165WF-BCWE is manufactured by Samsung Electronics, a South Korean multinational company. Samsung is known for its wide range of products, including semiconductors, consumer electronics, and telecommunications equipment. The company is one of the largest manufacturers of memory chips globally, producing DRAM, NAND flash memory, and other semiconductor products. Samsung Electronics is a key player in the technology sector, renowned for its innovation and research in electronics and digital technologies.

Application

The K4A4G165WF-BCWE is a DDR4 SDRAM memory chip commonly used in applications such as smartphones, tablets, laptops, and other consumer electronics. It supports high-speed data processing and is ideal for gaming devices, networking equipment, and server applications due to its energy efficiency and performance. Additionally, it is utilized in automotive and industrial electronics for data storage and processing tasks.

Equivalent

The K4A4G165WF-BCWE is a 4Gb DDR4 SDRAM chip. Equivalent products include similar 4Gb DDR4 chips from various manufacturers, such as:
1. Micron MT40A4G8
2. Hynix H5AN4G8NFD
3. Samsung K4A4G165WF-BCEU
Ensure to check specifications like voltage, package type, and speed for compatibility.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

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