K4A4G165WE-BCRC

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K4A4G165WE-BCRC

4Gbit 1.14V~1.26V 1.2GHz DDR4 SDRAM FBGA-96 Memory (ICs) RoHS

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Spécifications

Packaging FBGA-96
Clock Frequency 1.2GHz
Current - Supply 35mA
Memory Format DDR4 SDRAM
Memory Size 4Gbit
Operating temperature 0℃~+95℃
Refresh Current 13mA
Voltage - Supply 1.14V~1.26V

Vue d'ensemble

Description

The K4A4G165WE-BCRC is a 4GB DDR3 SDRAM (Dynamic Random Access Memory) chip manufactured by Samsung. It operates on a 1.5V power supply and is part of the DDR3L series, which supports lower voltage operation (1.35V) for power efficiency. This memory module features a data rate of up to 1866 MT/s (million transfers per second) and is designed for use in various applications, including laptops, desktops, and embedded systems. The BCRC designation indicates specific characteristics related to the chip's configuration and packaging, which typically includes a 78-ball BGA (Ball Grid Array) format. The K4A4G165WE-BCRC is suitable for applications requiring high-speed data processing and efficient performance, making it widely used in modern computing devices.

Features

The K4A4G165WE-BCRC is a DRAM (Dynamic Random Access Memory) chip produced by Samsung, specifically designed for mobile applications. Key features include:
1. Type: DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic RAM).
2. Density: 4GB capacity (4 gigabits per chip).
3. Data Rate: Operates at a data rate of 1600 MT/s (megatransfers per second).
4. Voltage: Typically operates at a low voltage of 1.5V, making it energy-efficient.
5. Architecture: Features a 512MB x 16 architecture, enabling high-performance data processing.
6. Package: Available in a small form factor, often in BGA (Ball Grid Array) packaging, suitable for compact devices.
7. Usage: Commonly used in smartphones, tablets, and other portable devices where space and power efficiency are critical.
Overall, the K4A4G165WE-BCRC is optimized for high-performance mobile applications, balancing capacity and efficiency.

Package

The K4A4G165WE-BCRC is a DRAM chip packaged in a standard 96-ball FBGA (Fine Ball Grid Array) format. This compact package design is commonly used for mobile and embedded applications, offering efficient space usage and thermal performance.

Pinout

The K4A4G165WE-BCRC is a 4Gb DDR3 SDRAM memory chip produced by Samsung. It comes in a 78-ball (8mm x 8mm) BGA (Ball Grid Array) package.
### Pin Count:
- Total Pins: 78 balls
### Functions:
- This memory chip operates at a data rate of 1600 MT/s and is designed for low power consumption, making it suitable for a variety of applications, including mobile devices and consumer electronics.
- It supports a voltage of 1.5V (standard DDR3) with a low-power version available at 1.35V (DDR3L).
- The chip features a wide data bus of 16 bits, allowing for efficient data transfer.
Overall, the K4A4G165WE-BCRC is a high-density memory solution, ideal for enhancing the performance of modern electronic systems.

Manufacturer

The K4A4G165WE-BCRC is manufactured by Samsung Electronics. Samsung is a South Korean multinational conglomerate, known primarily for its electronics division, which produces a wide range of products including semiconductors, smartphones, televisions, and consumer appliances. Founded in 1938, Samsung has grown to become one of the largest technology companies in the world, specializing in various areas such as electronics, information technology, and telecommunications. The company is particularly recognized for its advancements in memory technology, including DRAM and NAND flash products, which are critical components in computers, mobile devices, and other electronics. Samsung's commitment to innovation and research and development has positioned it as a leader in the global technology market.

Application

The K4A4G165WE-BCRC is a 4Gb DDR3 SDRAM memory chip commonly used in various applications, including consumer electronics, laptops, desktop computers, servers, and networking devices. It supports high-speed data access and is ideal for applications requiring efficient memory performance, such as gaming, multimedia processing, and virtual machines. Additionally, it is utilized in embedded systems and telecommunications equipment.

Equivalent

The K4A4G165WE-BCRC chip is a 4GB DDR4 DRAM memory module. Equivalent products include:
1. Hynix H5AN4G6NBJR
2. Micron MT40A4G8
3. Samsung K4AAG085WE
4. SK Hynix H5AN4G6NC
Ensure compatibility with the intended application, as specifications like speed and voltage may vary.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

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