JS28F512M29EWHA

Les images sont à titre de référence seulement

JS28F512M29EWHA

IC FLASH 512MBIT PARALLEL 56TSOP

  • Fabricant
  • Mfr. Partie #JS28F512M29EWHA
  • Paquet
  • Fiche de données
  • En stock6499

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Part Status Obsolete
Base Product Number JS28F512M29
DigiKey Programmable Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 512Mbit
Memory Organization 64M x 8, 32M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 110ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 56-TSOP
Packaging Tray
Access Time 110 ns

Vue d'ensemble

Description

The JS28F512M29EWHA is a 512Mb (64MB) NAND Flash memory chip developed by Micron Technology. It utilizes a multi-level cell (MLC) architecture, allowing it to store multiple bits per cell, which enhances storage density. This chip is typically used in applications requiring substantial data storage, such as mobile devices, consumer electronics, and embedded systems.
Key features include support for a range of interfaces (e.g., ONFI), high-speed read and write operations, and advanced error correction capabilities, which improve data integrity and performance. The JS28F512M29EWHA is designed for reliability, with mechanisms for wear leveling and bad block management, which extend the lifespan of the memory.
This NAND Flash memory is ideal for applications where space and performance are critical, making it a popular choice among manufacturers seeking efficient storage solutions.

Features

The JS28F512M29EWHA is a NAND Flash memory device featuring the following key specifications:
1. Density: 512Mb (64MB) storage capacity.
2. Interface: Supports a parallel interface, making it compatible with various microcontrollers and processors.
3. Organization: It is organized as 64 pages of 8 bytes each, allowing for efficient data management and retrieval.
4. Access Time: Offers fast access times, ensuring quick read and write operations.
5. Endurance: Designed for high endurance, typically supporting a large number of program and erase cycles.
6. Data Retention: Provides robust data retention capabilities, ensuring stored data remains intact over time.
7. Low Power Consumption: Optimized for low power usage, making it suitable for battery-operated devices.
8. Reliability: Features built-in error correction mechanisms to enhance data integrity and reliability.
This device is commonly used in applications such as mobile phones, consumer electronics, and embedded systems where compact and efficient storage is required.

Package

The JS28F512M29EWHA is a NAND flash memory device packaged in a TSOP (Thin Small Outline Package) format. This package type is designed for surface mounting and offers a compact footprint suitable for space-constrained applications in consumer electronics and embedded systems.

Manufacturer

The manufacturer of the JS28F512M29EWHA is Intel Corporation. Intel is a multinational technology company primarily known for designing and manufacturing semiconductor products, particularly microprocessors for computer systems. Founded in 1968, Intel is a leading player in the semiconductor industry and is pivotal in the development of microchips for personal computers, servers, and various electronic devices. The company also engages in research and development of technologies related to artificial intelligence, cloud computing, and the Internet of Things (IoT). Intel's extensive portfolio includes memory products, such as flash memory, and it plays a crucial role in advancing computing technologies globally.

Application

The JS28F512M29EWHA is a NAND flash memory device commonly used in applications such as mobile devices, consumer electronics, automotive systems, industrial automation, and embedded systems. Its high density and performance make it suitable for data storage in smartphones, tablets, digital cameras, and solid-state drives (SSDs), enabling fast data access and reliable storage solutions.

Equivalent

The JS28F512M29EWHA chip is a 512Mb NAND flash memory. Equivalent products include:
1. Micron MT29F512G08
2. Samsung K9F2G08U0M
3. Hynix H27UAG8T2BTR
4. Toshiba TH58NVG5D2FL
5. Winbond W29N512G
Always verify specific features and compatibility before substitution.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire