IXXX200N65B4

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IXXX200N65B4

IGBT PT 650V 370A PLUS247

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  • Mfr. Partie #IXXX200N65B4
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  • En stock7021

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Spécifications

Series GenX4™, XPT™
Part Status Active
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 370 A
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 160A
Power - Max 1150 W
Switching Energy 4.4mJ (on), 2.2mJ (off)
Input Type Standard
Gate Charge 553 nC
Td (on/off) @ 25°C 62ns/245ns
Test Condition 400V, 100A, 1Ohm, 15V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Supplier Device Package PLUS247™-3
Base Product Number IXXX200
Current - Collector Pulsed (Icm) 1000 A

Vue d'ensemble

Description

The IXXX200N65B4 is a high-performance, N-channel MOSFET designed for power applications, particularly in industrial and automotive sectors. It features a maximum drain-source voltage (Vds) of 650V and a continuous drain current (Id) of 200A, making it suitable for high-voltage and high-current operations. The device is characterized by low on-resistance (Rds(on)), which contributes to improved efficiency and reduced heat generation during operation.
This MOSFET is often utilized in applications such as power supplies, motor drives, and inverters, where efficiency and thermal management are critical. It typically includes a robust gate drive capability, allowing for fast switching speeds, which enhances overall circuit performance. Additionally, the IXXX200N65B4 is designed to handle high-temperature environments, making it reliable for demanding applications.
Overall, this MOSFET represents a versatile component for engineers looking to optimize power management solutions in various electronic systems.

Features

The IXXX200N65B4 is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for power electronics applications. Key features include:
1. Voltage Rating: 650V, making it suitable for medium-voltage applications.
2. Current Rating: 200A, allowing for robust power handling capabilities.
3. Low Switching Losses: Optimized for efficiency, it provides low conduction and switching losses, enhancing overall system performance.
4. Fast Switching Speeds: The device supports high-frequency operation, beneficial for applications like inverters and converters.
5. High Thermal Stability: Its thermal performance ensures reliability under varying load conditions.
6. Soft Recovery Characteristics: Reduces electromagnetic interference (EMI), improving system reliability and performance.
7. Robust Packaging: Typically found in a module format, facilitating effective heat dissipation and ease of integration into power systems.
These features make the IXXX200N65B4 ideal for applications in renewable energy systems, motor drives, and industrial automation.

Package

The IXXX200N65B4 is typically packaged in a TO-247 style, which is a robust, high-power package designed for efficient thermal management and electrical performance in switching applications.

Pinout

The IXXX200N65B4 is a MOSFET that typically features a pin count of 4. The functions of these pins are as follows:
1. Gate (G): This pin controls the MOSFET, allowing the user to turn the device on or off by applying a voltage.
2. Drain (D): This is where the output current flows out of the MOSFET when it is in the on state.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit, allowing current to flow from drain to source when the MOSFET is activated.
4. Temperature Sense (optional): Some variants may include a temperature sensing pin for thermal management.
This device is designed for high-voltage applications, with a maximum voltage rating of 650V and a current rating of 200A, making it suitable for various power applications. Always consult the specific datasheet for detailed electrical characteristics and usage guidelines.

Manufacturer

The IXXX200N65B4 is manufactured by Infineon Technologies AG, a global semiconductor manufacturer based in Germany. Infineon specializes in a wide range of products, including power semiconductors, microcontrollers, and sensors, primarily for automotive, industrial, and consumer electronics applications. The company is known for its innovation in power management and energy efficiency solutions, focusing on enabling a connected and sustainable world. Founded in 1999, Infineon continues to be a key player in the semiconductor industry, catering to various sectors such as automotive, industrial, and IoT.

Application

The IXXX200N65B4 is a 650V, 200A IGBT (Insulated Gate Bipolar Transistor) used primarily in industrial applications. Key areas include:
1. Motor Drives - For controlling electric motors in various machinery.
2. Renewable Energy - Inverters for solar and wind energy systems.
3. Electric Vehicles - Power conversion and motor control.
4. Rail and Transportation - Traction drives for trains and trams.
5. UPS Systems - Uninterruptible power supplies for reliable energy back-up.

Equivalent

The IXXX200N65B4 is a 650V, 200A IGBT (Insulated Gate Bipolar Transistor) module. Equivalent products include the Infineon IGBT modules such as the FZ200R65KL3 or the FZ200R65KS4, as well as the Mitsubishi MG200Q2YS40. Always verify specifications and compatibility before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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