IXTY1R6N50D2

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IXTY1R6N50D2

MOSFET N-CH 500V 1.6A TO252

  • Fabricant
  • Mfr. Partie #IXTY1R6N50D2
  • Paquet TO-252AA
  • Fiche de données
  • En stock3430

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Spécifications

Package Tube
Series Depletion
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 500 V
Current-ContinuousDrain(Id)@25°C 1.6A (Tc)
RdsOn(Max)@IdVgs 2.3Ohm @ 800mA, 0V
GateCharge(Qg)(Max)@Vgs 23.7 nC @ 5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 645 pF @ 25 V
FETFeature Depletion Mode
PowerDissipation(Max) 100W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252AA

Vue d'ensemble

Description

IXTY1R6N50D2 is likely a part number or model designation for an electronic component, typically a power transistor or integrated circuit. While specific details about IXTY1R6N50D2 are not widely available, components with similar naming conventions often belong to the category of switching devices used in power management applications, such as DC-DC converters, motor control, or power regulation.
These devices are characterized by their voltage rating, current handling capacity, switching speed, and thermal performance. Users often refer to datasheets provided by manufacturers to understand the specifications, functionality, and potential applications of such components.
For accurate information, it’s advisable to consult the manufacturer's documentation or datasheets, which would provide detailed parameters, application notes, and circuit examples.

Features

The IXTY1R6N50D2 is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: 500V, suitable for high-voltage applications.
2. Continuous Drain Current: Up to 1.6A, allowing for efficient operation in various circuits.
3. RDS(on): Low on-resistance, typically around 1.6 ohms, which reduces power loss and enhances efficiency.
4. Gate-Source Voltage: Maximum of ±20V, providing flexibility in gate drive designs.
5. Fast Switching Speed: Enables better performance in switching applications, reducing transition losses.
6. Thermal Resistance: Good thermal management properties for reliability in high-temperature conditions.
7. Package Type: Typically comes in a TO-220 package, allowing for effective heat dissipation.
These specifications make the IXTY1R6N50D2 suitable for use in various applications, including power supplies, motor drivers, and conversion circuits.

Package

The IXTY1R6N50D2 is typically packaged in a TO-220 format. This package type is commonly used for power transistors and offers good thermal performance and ease of mounting for heat dissipation.

Pinout

The IXTY1R6N50D2 is a power MOSFET with a total of 6 pins. Its main functions include acting as a switch or amplifier in electronic circuits, specifically for high-voltage applications. The device is designed for use in power supplies, motor drives, and other high-efficiency switching applications. The key features of this MOSFET include a maximum drain-source voltage (VDS) of 500V and a continuous drain current (ID) of 1.6A. The IXTY1R6N50D2 is housed in a TO-220 package, which facilitates heat dissipation and easy mounting to heatsinks.

Manufacturer

The IXTY1R6N50D2 is manufactured by IXYS Corporation, which is a semiconductor company specializing in power management and control solutions. IXYS designs and produces a wide range of semiconductor products, including power MOSFETs, IGBTs, diodes, and other related devices used in various applications such as industrial, automotive, and renewable energy systems. The company focuses on high-performance and efficient power devices to meet the growing demands for energy efficiency and power management in modern electronics. IXYS Corporation is known for its innovative technologies and has a strong presence in the global semiconductor market.

Application

The IXTY1R6N50D2 is a high-voltage, N-channel MOSFET primarily used in power electronics applications. Its application areas include switch-mode power supplies (SMPS), motor drives, and inverters for renewable energy systems. It is also suitable for high-frequency applications, such as RF amplifiers and telecommunications. Its ability to handle high voltage and current makes it ideal for industrial and automotive applications as well.

Equivalent

The IXTY1R6N50D2 is an IGBT (Insulated Gate Bipolar Transistor) suitable for high-voltage applications. Equivalent products include:
1. Infineon FGH50N60SMD
2. STMicroelectronics STGW30H65
3. ON Semiconductor MTP50N50
Always verify specifications such as voltage, current ratings, and switching characteristics before substitution.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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