IXTY01N100D

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IXTY01N100D

MOSFET N-CH 1000V 400MA TO252AA

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Spécifications

Package Tube
Series Depletion
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 1000 V
Current-ContinuousDrain(Id)@25°C 400mA (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 0V
RdsOn(Max)@IdVgs 80Ohm @ 50mA, 0V
Vgs(th)(Max)@Id 4.5V @ 25µA
GateCharge(Qg)(Max)@Vgs 5.8 nC @ 5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 100 pF @ 25 V
FETFeature Depletion Mode
PowerDissipation(Max) 1.1W (Ta), 25W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252AA

Vue d'ensemble

Description

IXTY01N100D is a high-performance N-channel MOSFET designed for power management applications. It features a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 20A, making it suitable for various applications, including switching power supplies, motor drives, and DC-DC converters. The device is built using advanced semiconductor technology, ensuring low on-resistance (Rds(on)), which enhances efficiency and reduces heat generation during operation.
The IXTY01N100D typically comes in a TO-220 or similar package, allowing for efficient thermal dissipation. Its fast switching capabilities make it ideal for applications requiring rapid on-off control. Additionally, the MOSFET is designed with a robust gate oxide to ensure high reliability and performance under varying conditions.
Overall, IXTY01N100D is a versatile component useful in both consumer electronics and industrial equipment where efficiency and reliability are critical.

Features

The IXTY01N100D is an N-channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) rating of 1A. This MOSFET offers low on-resistance, typically around 1.6 ohms, ensuring efficient power management and reduced heat generation during operation.
Key features include:
- High Voltage Rating: Suitable for applications requiring up to 100V.
- Low On-Resistance: Minimizes conduction losses, enhancing efficiency.
- Fast Switching Speed: Ideal for high-frequency applications.
- Thermal Resistance: Good thermal performance allows for better heat dissipation.
- Compact Package: Typically available in a TO-220 or similar package, facilitating easy mounting and heat management.
These characteristics make the IXTY01N100D suitable for use in power supplies, motor drivers, and other electronic circuits where reliability and performance are critical.

Package

The IXTY01N100D is packaged in a TO-220 form factor. This package type is designed for power devices, allowing efficient heat dissipation and suitable for applications requiring high voltage and current handling.

Pinout

The IXTY01N100D is an N-channel MOSFET with a total of 8 pins. Its primary functions include serving as a power switch in various applications, including automotive and industrial systems, where it can handle high voltage and current. The pin configuration typically consists of the following:
1. Gate (G): Controls the device's switching operation.
2. Drain (D): Connects to the load.
3. Source (S): Connects to the ground or negative side of the circuit.
The IXTY01N100D is rated for a maximum drain-source voltage of 100V and can handle a continuous drain current of up to 20A, making it suitable for high-power applications. This device provides low on-resistance, which enhances efficiency in power conversion circuits. Always refer to the manufacturer's datasheet for detailed specifications and applications.

Manufacturer

The IXTY01N100D is manufactured by IXYS Corporation, a company that specializes in power semiconductor products. IXYS, now part of Littelfuse, Inc., focuses on providing integrated and discrete semiconductor solutions for various applications, including power management, industrial automation, and renewable energy systems. The company is known for its expertise in high-voltage and high-current devices, including thyristors, IGBTs, and MOSFETs. With a strong emphasis on innovation, IXYS serves diverse markets such as telecommunications, automotive, and consumer electronics.

Application

The IXTY01N100D is a high-voltage, high-speed IGBT (Insulated Gate Bipolar Transistor) primarily used in power electronics applications. It is suitable for industrial motor drives, renewable energy systems (like solar inverters), UPS systems, and electric vehicles. Its capabilities allow for efficient switching and high-temperature operation, making it ideal for applications requiring reliable power conversion and control.

Equivalent

The IXTY01N100D is an IGBT (Insulated Gate Bipolar Transistor) with a 1000V rating and a current rating of 1A. Equivalent products include the Infineon IGBT model IKW40N100T2, the ON Semiconductor NGTB40N120, and the STMicroelectronics STGWA40N120. Always verify specifications to ensure compatibility for your specific application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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