IXTT16N10D2

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IXTT16N10D2

MOSFET N-CH 100V 16A TO268

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  • Mfr. Partie #IXTT16N10D2
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Spécifications

Series Depletion
Part Status Obsolete
FET Type N-Channel, Depletion Mode
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 0V
Rds On (Max) @ Id, Vgs 64mOhm @ 8A, 0V
Gate Charge (Qg) (Max) @ Vgs 225 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5700 pF @ 25 V
Power Dissipation (Max) 830W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268AA
Package / Case TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Base Product Number IXTT16

Vue d'ensemble

Description

IXTT16N10D2 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features a maximum drain-source voltage (V_DS) of 160V and a continuous drain current (I_D) of 10A, making it suitable for high-voltage switching and amplification tasks. The device is characterized by low on-resistance (R_DS(on)), which minimizes power losses and enhances efficiency in power conversion circuits.
IXTT16N10D2 typically comes in a TO-220 package, facilitating effective heat dissipation. Its fast switching speeds make it ideal for applications such as power supplies, motor drives, and converters, where efficiency and thermal performance are crucial. The device is also designed to handle high-speed switching operations, making it suitable for use in PWM (Pulse Width Modulation) applications.
Overall, the IXTT16N10D2 is an excellent choice for engineers seeking reliability and efficiency in high-voltage power management solutions.

Features

The IXTT16N10D2 is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, suitable for various medium-voltage applications.
2. Continuous Drain Current: It supports a continuous drain current (I_D) of 16A, allowing it to handle substantial loads.
3. R_DS(on): The on-resistance is low, typically around 0.1 ohms, which enhances efficiency and reduces heat dissipation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2 to 4V, providing compatibility with low-voltage drive signals.
5. Package: It is available in a TO-220 package, facilitating easy mounting and heat dissipation.
6. Fast Switching: Designed for quick switching applications, making it ideal for power management circuits, DC-DC converters, and motor drivers.
Overall, the IXTT16N10D2 is well-suited for applications requiring efficient power control and thermal performance.

Package

The IXTT16N10D2 is typically packaged in a TO-220 format. This package type is commonly used for power semiconductors, providing good thermal performance and ease of mounting to heat sinks.

Pinout

The IXTT16N10D2 is an N-channel MOSFET manufactured by IXYS. It features a total of 8 pins. Its primary functions include:
1. Gate (G): Controls the on/off state of the MOSFET.
2. Drain (D): Connects to the load and allows current to flow from the drain to the source when the MOSFET is on.
3. Source (S): The terminal through which current exits the MOSFET; typically connected to ground.
The pin configuration typically includes:
1. Gate (G)
2. Drain (D)
3. Source (S)
4. Drain (D) (for thermal and electrical performance)
5. Source (S) (for thermal and electrical performance)
6. Gate (G) (for thermal and electrical performance)
7. D (Drain) - additional pin for improved heat dissipation.
8. S (Source) - additional pin for improved heat dissipation.
This device is designed for high-speed switching applications and can handle significant power, making it suitable for various power management and amplification functions in electronic circuits.

Manufacturer

The IXTT16N10D2 is manufactured by IXYS Corporation, which is a part of the Littelfuse family of companies. IXYS specializes in the design and manufacturing of power semiconductors, including MOSFETs, IGBTs, and rectifiers. The company is known for its innovative products used in various applications such as industrial automation, renewable energy systems, and electric vehicles. IXYS focuses on high-performance semiconductor solutions, catering to markets that require efficient power management and switching technologies.

Application

The IXTT16N10D2 is an N-channel MOSFET primarily used in power electronics applications, including DC-DC converters, motor drives, and power management systems. Its high voltage and current handling capabilities make it suitable for industrial power supplies, electric vehicles, and renewable energy systems, such as solar inverters. Additionally, it can be utilized in general switching and amplifying applications in various electronic circuits.

Equivalent

The IXTT16N10D2 is a N-channel MOSFET. Equivalent products include the IRF160, STP16NF10, and BTA16-800V. However, check specifications like voltage, current ratings, and Rds(on) for compatibility before replacement, as these parameters can vary. Always consult manufacturer's datasheets for precise equivalency.

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TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

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