IXTQ60N20T

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IXTQ60N20T

MOSFET N-CH 200V 60A TO3P

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  • Mfr. Partie #IXTQ60N20T
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Spécifications

Series Trench
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4530 pF @ 25 V
Power Dissipation (Max) 500W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-3P-3, SC-65-3
Base Product Number IXTQ60

Vue d'ensemble

Description

The IXTQ60N20T is a high-performance N-channel MOSFET designed for power electronics applications. It features a maximum drain-source voltage (V_DS) of 600 volts and a continuous drain current (I_D) rating of 60 amps, making it suitable for high-voltage and high-current applications, such as industrial motor drives, power supplies, and inverters.
This device has a low on-resistance (R_DS(on)), which minimizes power loss during operation and improves efficiency. It typically exhibits fast switching capabilities, allowing for better performance in high-frequency applications. The IXTQ60N20T is packaged in a TO-247 format, which facilitates effective heat dissipation due to its larger surface area.
When selecting this MOSFET, it's crucial to consider its thermal characteristics and the specific application requirements, including gate drive voltage and switching frequency. Overall, the IXTQ60N20T is a robust choice for engineers seeking reliability and efficiency in their circuit designs.

Features

The IXTQ60N20T is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 60A, allowing it to manage significant loads.
3. On-Resistance: The R_DS(on) is typically low, around 0.06Ω at 10V gate voltage, which enhances efficiency by reducing power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is typically between 2V to 4V, enabling it to turn on effectively with lower gate voltages.
5. Package Type: It's available in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Applications: Suitable for applications such as power supplies, motor drives, and industrial control systems.
These characteristics make the IXTQ60N20T ideal for energy-efficient designs in various electronic systems.

Package

The IXTQ60N20T is packaged in a TO-247 form factor, which is a standard package for power transistors. This package provides good thermal performance and is suitable for high-power applications.

Pinout

The IXTQ60N20T is an N-channel MOSFET with a pin count of 3. The pin functions are as follows:
1. Gate (G) - This pin is used to control the switching of the MOSFET. A voltage applied to the gate can turn the device on or off.
2. Drain (D) - This is the terminal through which the load current flows when the MOSFET is in the on state. It is connected to the load.
3. Source (S) - This pin is connected to the ground or the source of the power supply. It serves as the reference point for the drain current.
The IXTQ60N20T is typically used in power switching applications due to its high voltage and current handling capabilities.

Manufacturer

The IXTQ60N20T is manufactured by IXYS Corporation, a company that specializes in the design and production of power semiconductors and integrated circuits. IXYS is known for its innovations in power management solutions, including devices used in various applications such as renewable energy, industrial automation, and automotive systems. The company focuses on high-performance semiconductor products, offering a range of devices including MOSFETs, IGBTs, and rectifiers. IXYS is recognized for its emphasis on quality and efficiency in power electronics, catering to a diverse market with its advanced technologies.

Application

The IXTQ60N20T is an N-channel MOSFET primarily used in applications such as power supplies, motor drives, and switching regulators. Its high voltage and current ratings make it suitable for efficient power management in industrial equipment, automotive systems, and consumer electronics. Additionally, it can be utilized in renewable energy systems like solar inverters and electric vehicle chargers for effective energy conversion and control.

Equivalent

The IXTQ60N20T is an N-channel MOSFET typically used for power applications. Equivalent products include the IRF320, STP60NF20, and FQP60N20. Make sure to verify specifications such as voltage, current, and RDS(on) to ensure compatibility for your specific application.

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TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

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