IXTP80N10T

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IXTP80N10T

MOSFET N-CH 100V 80A TO220AB

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  • Mfr. Partie #IXTP80N10T
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Spécifications

Series Trench
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3040 pF @ 25 V
Power Dissipation (Max) 230W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number IXTP80

Vue d'ensemble

Description

The IXTP80N10T is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features a voltage rating of 100V and a continuous current rating of 80A, making it suitable for various applications including power supplies, motor drivers, and converters.
This MOSFET is characterized by low on-resistance (RDS(on)), which minimizes power loss and heat generation during operation, enhancing overall efficiency. Its fast switching capabilities enable it to handle high-frequency applications effectively.
The IXTP80N10T is housed in a TO-220 package, allowing for better heat dissipation through suitable heat sinks. Additionally, it is designed with a gate threshold voltage that ensures reliable operation in diverse conditions.
Overall, the IXTP80N10T is ideal for applications requiring efficient power management and effective thermal performance.

Features

The IXTP80N10T is an N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for a variety of power applications.
2. Current Rating: Rated for a continuous drain current (I_D) of 80A, which supports substantial load requirements.
3. Low R_DS(on): The on-resistance is typically low (around 0.10Ω), which minimizes conduction losses and improves thermal performance.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy drive from standard microcontrollers or drivers.
5. Fast Switching Speeds: It features fast switching characteristics, making it ideal for applications such as PWM control, DC-DC converters, and motor drivers.
6. Package Type: Available in a TO-220 package, facilitating effective heat dissipation and ease of mounting.
These features make the IXTP80N10T a reliable choice for power management in various electronic applications.

Package

The IXTP80N10T is typically packaged in a TO-220 or TO-247 format. These packages provide efficient heat dissipation and are commonly used for power applications in electronic circuits.

Pinout

The IXTP80N10T is an N-channel MOSFET that features a pin count of 3. The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching operation. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal where the load current enters. It connects to the device or circuit that is being powered.
3. Source (S): This pin is connected to ground or the return path for the load current. Current flows out of the source terminal when the device is turned on.
The IXTP80N10T is designed for high-efficiency applications and has a maximum drain-source voltage (V_DS) rating of 100V and a maximum continuous drain current (I_D) of 80A.

Manufacturer

The IXTP80N10T is manufactured by IXYS Corporation, which is a subsidiary of Littelfuse, Inc. IXYS specializes in semiconductor products, particularly in the areas of power management, analog, and digital technologies. The company designs and produces a wide range of devices, including MOSFETs, IGBTs, diodes, and rectifiers, primarily for applications in industrial, automotive, telecommunications, and consumer markets. IXYS is known for its innovation in power management solutions and focuses on improving energy efficiency and overall performance in electronic systems.

Application

The IXTP80N10T is an N-channel MOSFET primarily used in power management applications, including switching power supplies, DC-DC converters, motor drives, and industrial automation. Its high voltage and current capabilities make it suitable for applications in renewable energy systems, electric vehicles, and consumer electronics. Additionally, it can be utilized in high-frequency circuits and for signal amplification in various electronic devices.

Equivalent

The IXTP80N10T is an N-channel MOSFET with a 100V, 80A rating. Equivalent products include the IRF320, STP80NF10, and FQP80N10. Ensure to check specifications like R_DS(on), gate threshold voltage, and package type to confirm compatibility for your specific application.

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