IXTH52N65X

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IXTH52N65X

MOSFET N-CH 650V 52A TO247

  • Fabricant
  • Mfr. Partie #IXTH52N65X
  • Paquet TO-247-3
  • Fiche de données
  • En stock4599

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Spécifications

Package Tube
Series Ultra X
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 52A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 68mOhm @ 26A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 113 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 4350 pF @ 25 V
PowerDissipation(Max) 660W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247 (IXTH)

Vue d'ensemble

Description

The IXTH52N65X is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for applications requiring high voltage and current handling. It features a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 52A, making it suitable for power electronics, including switch-mode power supplies, motor drives, and inverters.
This MOSFET is characterized by its low on-resistance (R_DS(on)), which minimizes power loss and enhances efficiency in circuits. It also offers fast switching speeds, contributing to improved performance in high-frequency applications. Additionally, the IXTH52N65X is designed with a robust package to handle thermal stress, providing reliable operation in demanding environments.
Overall, the IXTH52N65X serves as an effective component in various configurations, supporting both high-voltage and high-current designs, while ensuring optimal thermal management and energy efficiency.

Features

The IXTH52N65X is a high-voltage N-channel MOSFET designed for power switching applications. Its key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling a continuous drain current (I_D) of up to 52A, with appropriate heat sinking.
3. Low On-Resistance: Offers a low R_DS(on) of approximately 0.38 ohms, ensuring efficient power conversion and reduced heat generation during operation.
4. Fast Switching: Designed for high-speed switching applications, enhancing efficiency in power supplies and converters.
5. Thermal Performance: Features a TO-247 package that aids in effective heat dissipation, allowing operation at higher temperatures.
6. Gate Threshold Voltage: Has a gate threshold voltage (V_GS(th)) typically around 3-4V, enabling easy drive with low-voltage controllers.
Overall, the IXTH52N65X is ideal for use in applications like motor drives, power inverters, and other high-efficiency power management systems.

Package

The IXTH52N65X is typically packaged in a TO-220 format, which is a metal-can package designed for high-power applications. It provides excellent thermal performance and is suitable for heat dissipation in power electronics.

Pinout

The IXTH52N65X is an N-channel MOSFET with a pin count of 3. Its primary functions are to act as a switch or amplifier in electronic circuits, particularly in high-voltage applications.
The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's switching on and off by applying a voltage.
2. Drain (D): The output terminal where the load is connected, allowing current to flow from this pin when the device is turned on.
3. Source (S): Common reference point for the voltage applied to the gate, typically connected to ground in low-side switching applications.
The IXTH52N65X is rated for a maximum drain-source voltage of 650V and a continuous drain current of 52A, making it suitable for use in power supplies, motor drives, and other high-power applications.

Manufacturer

The IXTH52N65X is manufactured by IXYS Corporation, which is a subsidiary of Littelfuse, Inc. IXYS specializes in the design and production of high-performance power semiconductors and integrated circuits. The company is known for its innovations in power management, including products like MOSFETs, IGBTs, and diodes, which are widely used in various applications such as renewable energy, industrial automation, and consumer electronics. Littelfuse, the parent company, focuses on circuit protection, power control, and sensing technologies, serving multiple industries worldwide.

Application

The IXTH52N65X is a high-voltage, N-channel MOSFET primarily used in power conversion applications. Its key areas include switch-mode power supplies (SMPS), industrial motor drives, UPS systems, and inverters for renewable energy systems. Additionally, it is suitable for applications in automotive electronics and consumer electronics, where efficient power management is critical.

Equivalent

The IXTH52N65X is an N-channel MOSFET. Equivalent products include:
1. STP52N65M2
2. IRF520
3. FQP52N65
4. BUK765R6-40
Always verify specifications such as VDS, ID, RDS(on), and package type for compatibility in your application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

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