IXTH48N65X2

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IXTH48N65X2

MOSFET N-CH 650V 48A TO247

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Spécifications

Series Ultra X2
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 68mOhm @ 24A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 77 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4420 pF @ 25 V
Power Dissipation (Max) 660W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 (IXTH)
Package / Case TO-247-3
Base Product Number IXTH48

Vue d'ensemble

Description

The IXTH48N65X2 is a high-performance N-channel MOSFET designed for use in power applications. It features a maximum drain-source voltage (VDS) of 650V and a continuous drain current (ID) rating of 48A, making it suitable for high-voltage switching applications such as power supplies and motor drives.
Key specifications include a low on-resistance (RDS(on)), which enhances efficiency by reducing power loss during operation. The device also supports fast switching speeds, which is crucial for applications requiring rapid on/off control.
Additionally, the IXTH48N65X2 is packaged in a TO-247 format, facilitating effective thermal management and easy integration into various circuit designs. Its robust construction and high thermal conductivity make it ideal for demanding environments.
Overall, the IXTH48N65X2 is a reliable choice for engineers looking to design efficient power electronics with high voltage and current capabilities.

Features

The IXTH48N65X2 is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It can handle high voltages up to 650V.
2. Current Rating: Offers a continuous drain current of 48A, suitable for demanding applications.
3. On-Resistance (Rds(on)): Low on-resistance (typically around 0.15 ohms at Vgs = 10V) ensures minimal power loss during operation.
4. Gate Threshold Voltage: It has a gate threshold voltage (Vgs(th)) ranging from 2-4V, facilitating efficient switching.
5. Fast Switching Speed: Optimized for fast switching, enhancing overall efficiency in applications.
6. Package Type: Available in a TO-247 package, which aids in effective heat dissipation.
7. Thermal Performance: High thermal conductivity for better heat management.

These features make the IXTH48N65X2 ideal for use in power supplies, industrial equipment, and renewable energy applications.

Package

The IXTH48N65X2 is typically packaged in a TO-247 package type, which is designed for power semiconductor devices, providing efficient thermal performance and electrical characteristics suitable for high-voltage applications.

Pinout

The IXTH48N65X2 is a high-voltage N-channel MOSFET designed for power switching applications. It features a total of 4 pins. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET's switching on and off by applying a voltage.
2. Drain (D): This is the output pin where the load is connected, allowing current to flow when the MOSFET is turned on.
3. Source (S): This pin connects to the ground or the negative side of the power supply, providing a return path for the current.
The IXTH48N65X2 is rated for a maximum drain-source voltage of 650V and offers low on-resistance, making it suitable for high-efficiency applications such as power supplies and motor drives. Its robust design allows for reliable performance in demanding environments.

Manufacturer

The IXTH48N65X2 is manufactured by Infineon Technologies AG, a prominent semiconductor manufacturer based in Germany. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and security ICs. The company serves various industries such as automotive, industrial, communications, and consumer electronics. Infineon is known for its innovations in power management and efficiency, particularly in applications like electric vehicles, renewable energy systems, and smart grids.

Application

The IXTH48N65X2 is an N-channel MOSFET primarily used in power electronics applications, including switching power supplies, motor control, and industrial automation. Its high voltage and current handling capabilities make it suitable for applications like DC-DC converters, inverters, and renewable energy systems. Additionally, it's utilized in electric vehicles and telecommunications for efficient power management.

Equivalent

Equivalent products to the IXTH48N65X2 MOSFET include the Infineon IPT65R048N2, STMicroelectronics STP48N65M5, and ON Semiconductor NTMFS5C648NL. These alternatives should have similar voltage, current, and switching characteristics suitable for high-power applications. Always verify specifications to ensure compatibility with your circuit design.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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