IXTH16P60P

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IXTH16P60P

MOSFET P-CH 600V 16A TO247

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Spécifications

Series PolarP™
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 720mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5120 pF @ 25 V
Power Dissipation (Max) 460W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 (IXTH)
Package / Case TO-247-3
Base Product Number IXTH16

Vue d'ensemble

Description

The IXTH16P60P is a high-performance insulated gate bipolar transistor (IGBT) designed for various applications requiring efficient power conversion, such as inverters, motor drives, and renewable energy systems. It features a maximum collector-emitter voltage rating of 600V and a continuous collector current rating of 16A, making it suitable for medium-power applications.
This IGBT offers low conduction and switching losses, enhancing overall system efficiency. Its fast switching capabilities reduce heat generation, enabling higher operational frequencies. Additionally, the IXTH16P60P includes built-in diode functionality, providing reverse recovery characteristics essential for applications like PWM (Pulse Width Modulation).
The package design typically allows for easy integration into circuit boards, and its robust thermal performance ensures reliable operation in demanding environments. Overall, the IXTH16P60P is ideal for engineers seeking reliable and efficient solutions in power electronics.

Features

The IXTH16P60P is a high-voltage, N-channel power MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (Id) is typically around 16A, allowing it to handle significant loads.
3. RDS(on): Low on-resistance (RDS(on)), typically around 0.16 ohms, reducing conduction losses and improving efficiency.
4. Gate Threshold Voltage: The gate-to-source voltage (Vgs(th)) is low, facilitating easier drive requirements.
5. Fast Switching Speed: Designed for quick switching, minimizing switching losses in high-frequency applications.
6. Package Type: Available in a TO-220 package, providing good thermal management and ease of mounting.
7. Thermal Resistance: Low thermal resistance ensures better performance under varying thermal conditions.
These features make the IXTH16P60P suitable for applications in power supplies, inverters, and motor drives.

Package

The IXTH16P60P is packaged in a TO-247 style, which is a large, rugged package designed for high-power applications. This package provides efficient thermal management and is suitable for various industrial and automotive uses.

Pinout

The IXTH16P60P is an N-channel MOSFET with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): Controls the MOSFET's operation; applying a voltage here turns the device on or off.
2. Drain (D): The terminal through which the current flows out of the MOSFET when it is in the 'on' state.
3. Source (S): The terminal through which the current enters the MOSFET.
4. Body Diode (no separate pin): The intrinsic body diode allows current to flow from the drain to the source in the opposite direction when reverse-biased.
The IXTH16P60P is designed for applications requiring efficient switching and handling of high voltages and currents, commonly used in power management and motor control applications.

Manufacturer

The IXTH16P60P is manufactured by IXYS Corporation, a subsidiary of Littelfuse, Inc. IXYS is a semiconductor company that specializes in the design and manufacturing of power semiconductor devices and integrated circuits. Their products are widely used in various applications, including renewable energy, industrial automation, electric vehicles, and telecommunications. The company is known for its innovations in power management and high-performance semiconductor solutions, catering to both commercial and industrial sectors.

Application

The IXTH16P60P is an IGBT (Insulated Gate Bipolar Transistor) primarily used in high-power applications such as motor drives, renewable energy systems (like solar inverters), industrial power supplies, and induction heating. Its ability to handle high voltage and current makes it suitable for switching applications in power electronics, including uninterruptible power supplies (UPS) and traction systems in electric vehicles.

Equivalent

The IXTH16P60P is an IGBT (Insulated Gate Bipolar Transistor) with a 600V rating and a current rating of 16A. Equivalent products include the STGW16H60 from STMicroelectronics, the FGA16N60 from ON Semiconductor, and the MG150Q2YS40 from Mitsubishi. Always check datasheets for specific parameters to ensure compatibility.

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