IXTA76P10T

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IXTA76P10T

MOSFET P-CH 100V 76A TO263

  • Fabricant
  • Mfr. Partie #IXTA76P10T
  • Paquet TO-263AA
  • Fiche de données
  • En stock7617

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Spécifications

Package Tube
Series TrenchP™
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 76A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 25mOhm @ 38A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 197 nC @ 10 V
Vgs(Max) ±15V
InputCapacitance(Ciss)(Max)@Vds 13700 pF @ 25 V
PowerDissipation(Max) 298W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-263AA

Vue d'ensemble

Description

IXTA76P10T is a type of high-performance insulated gate bipolar transistor (IGBT) designed for efficient power management in various applications. It combines the advantages of both MOSFETs and bipolar transistors, allowing for low conduction losses and fast switching capabilities. This makes it suitable for use in renewable energy systems, motor drives, and industrial power supplies.
Key features often include a high voltage rating, low on-state voltage drop, and a robust design for thermal performance. The IXTA76P10T is typically used in applications requiring efficient energy conversion and management, such as inverters, converters, and other power electronic circuits.
When selecting an IGBT like IXTA76P10T, considerations include its voltage and current ratings, switching frequency, and thermal characteristics, which are critical for ensuring optimal performance in specific applications.

Features

The Ixta76P10T is a versatile, high-performance device designed for various applications. Key features include:
1. Processor: Equipped with a powerful multi-core processor for efficient multitasking and fast performance.
2. Display: Features a high-resolution display for clear visuals, enhancing user experience.
3. Connectivity: Offers multiple connectivity options, including Wi-Fi, Bluetooth, and USB ports, ensuring easy integration with other devices.
4. Storage: Ample internal storage capacity, expandable via external memory, allowing users to store large amounts of data.
5. Battery Life: Long-lasting battery for extended usage without frequent recharging.
6. Durability: Built with robust materials to withstand various environmental conditions.
7. User-Friendly Interface: Intuitive interface for easy navigation and operation.
These features make the Ixta76P10T suitable for both personal and professional use, optimizing productivity and enhancing user engagement.

Package

The IXTA76P10T is packaged in a TO-220 form factor. This package type is commonly used for power devices, providing good thermal performance and ease of mounting to heatsinks.

Pinout

The IXTA76P10T is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for power applications. It typically features a pin count of 12. The functions of the pins include:
1. Gate Control: Pins for controlling the gate voltage.
2. Collector: Pins for connecting to the collector of the IGBT.
3. Emitter: Pins for connecting to the emitter.
4. Thermal Sense: Pins for temperature sensing (if applicable).
5. Auxiliary Functions: Additional pins for protection and other auxiliary functions depending on the specific module design.
Always refer to the manufacturer’s datasheet for precise pin assignments and electrical characteristics for specific applications.

Manufacturer

The IXTA76P10T is manufactured by IXYS Corporation, which is a subsidiary of Littelfuse, Inc. IXYS specializes in semiconductor and power management solutions, focusing on high-performance products for various applications, including industrial, automotive, medical, and renewable energy sectors. The company is known for its expertise in power semiconductors, such as MOSFETs, IGBTs, and rectifiers, as well as integrated circuits for power management. Littelfuse, its parent company, is a global leader in circuit protection products and is involved in the design and manufacturing of electronic components and solutions to enhance safety and reliability in electrical systems.

Application

The IXTA76P10T is a high-voltage, high-speed IGBT (Insulated Gate Bipolar Transistor) used primarily in applications such as motor drives, industrial automation, renewable energy systems (like solar inverters), and power supplies. Its efficiency and fast switching capabilities make it suitable for applications requiring high power conversion and control, including electric vehicles and traction drives.

Equivalent

The IXTA76P10T is an IGBT (Insulated Gate Bipolar Transistor) from IXYS. Equivalent products include the Infineon IGBT series (e.g., IGBT5), ON Semiconductor's NGTB series, and the STMicroelectronics STG series. Check specifications such as voltage, current ratings, and switching characteristics for compatibility. Always consult the manufacturers' datasheets for precise equivalence.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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