IXTA1N170DHV

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IXTA1N170DHV

MOSFET N-CH 1700V 1A TO263

  • Fabricant
  • Mfr. Partie #IXTA1N170DHV
  • Paquet TO-263-3
  • Fiche de données
  • En stock2461

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Spécifications

Package Tube
Series Depletion
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 1700 V
Current-ContinuousDrain(Id)@25°C 1A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 16Ohm @ 500mA, 0V
GateCharge(Qg)(Max)@Vgs 47 nC @ 5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 3090 pF @ 25 V
FETFeature Depletion Mode
PowerDissipation(Max) 290W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-263HV

Vue d'ensemble

Description

The IXTA1N170DHV is a high-voltage, N-channel power MOSFET designed for efficient switching applications. It features a maximum drain-source voltage (V_DS) of 170V and a continuous drain current (I_D) of 1A, making it suitable for use in power management circuits, converters, and various industrial applications. The device is characterized by low on-resistance (R_DS(on)), which helps minimize power loss and improve thermal performance.
With a fast switching speed, the IXTA1N170DHV is ideal for high-frequency applications, offering reliable performance in challenging conditions. The package type, typically available in TO-220 or similar formats, facilitates easy thermal management and PCB mounting.
Key specifications include a maximum gate-source voltage (V_GS) rating, safe operating area (SOA), and thermal resistance parameters that ensure safe operation under various load conditions. Overall, the IXTA1N170DHV is a versatile component for engineers seeking robust and efficient solutions in power electronics.

Features

The IXTA1N170DHV is a high-performance power MOSFET designed for various applications, featuring a maximum drain-source voltage (V_DS) of 170V and a continuous drain current (I_D) rating of 1A. Key features include:
1. Low On-Resistance (R_DS(on)): This enhances efficiency by minimizing conduction losses.
2. Fast Switching Speed: Ideal for applications requiring rapid on/off switching.
3. High Thermal Stability: Built to withstand high temperatures, ensuring reliability in demanding environments.
4. Low Gate Charge (Q_g): Results in reduced drive power requirements and improved switching performance.
5. Standard TO-220 Package: Facilitates easy heat dissipation and mounting in various configurations.
6. Applications: Suitable for use in power management, motor control, and general switching applications.
Overall, the IXTA1N170DHV is designed to deliver reliable performance in power electronic systems.

Package

The IXTA1N170DHV is packaged in a TO-220 type case, which is designed for easy heat dissipation and is suitable for power applications.

Pinout

The IXTA1N170DHV is an N-channel MOSFET with a pin count of 8. It features the following pin functions:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The terminal through which the current exits the MOSFET when it is turned on.
3. Source (S) - The terminal through which current enters the MOSFET.
4. Body Diode (D) - Provides a path for current when the MOSFET is off and the voltage is in reverse bias.
The remaining pins may include additional features such as a thermal pad or other connection points to facilitate mounting or heat dissipation. This device is typically used in applications such as power management, switching power supplies, and motor control.

Manufacturer

The IXTA1N170DHV is manufactured by IXYS Corporation, a subsidiary of Lite-On Technology Corporation. IXYS is a semiconductor company that specializes in the design and manufacturing of power semiconductors and integrated circuits. Their product offerings include MOSFETs, IGBTs, and diodes, which are widely used in power management, renewable energy, and industrial applications. The company focuses on providing innovative solutions for high-performance and high-efficiency applications, catering to various sectors such as automotive, telecommunications, and consumer electronics.

Application

The IXTA1N170DHV is an N-channel MOSFET primarily used in power electronics applications. Its key areas include DC-DC converters, motor drives, power inverters, and switch-mode power supplies (SMPS). It is suitable for high-efficiency switching applications due to its low on-resistance and fast switching capabilities, making it ideal for renewable energy systems, electric vehicles, and industrial automation.

Equivalent

The IXTA1N170DHV is a high-voltage N-channel MOSFET. Equivalent products include the STP1N170, IRF170, and FQP1N170. Ensure to verify specifications like V_DS, I_D, R_DS(on), and package type for compatibility. Always check the manufacturer's datasheets for the most accurate comparisons.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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