IXGH72N60A3

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IXGH72N60A3

IGBT PT 600V 75A TO-247AD

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Spécifications

Series GenX3™, XPT™
Part Status Active
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 75 A
Current - Collector Pulsed (Icm) 400 A
Vce(on) (Max) @ Vge, Ic 1.35V @ 15V, 60A
Power - Max 540 W
Switching Energy 1.38mJ (on), 3.5mJ (off)
Input Type Standard
Gate Charge 230 nC
Td (on/off) @ 25°C 31ns/320ns
Test Condition 480V, 50A, 3Ohm, 15V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AD
Base Product Number IXGH72

Vue d'ensemble

Description

The IXGH72N60A3 is a high-performance insulated gate bipolar transistor (IGBT) designed for industrial applications such as motor drives, inverters, and power supplies. Featuring a voltage rating of 600V and a maximum continuous current of 72A, it combines the advantages of both MOSFETs and bipolar transistors, enabling efficient switching and control of high power levels.
Key features include low on-state voltage drop, fast switching capabilities, and a robust design that enhances reliability in demanding environments. The device is housed in a TO-220 package, facilitating easy integration into various circuits. Its thermal performance ensures efficient heat dissipation, making it suitable for applications that require high efficiency and thermal management.
Overall, the IXGH72N60A3 is ideal for power electronic systems that require high efficiency, low losses, and reliable operation, contributing to improved performance in energy conversion and control applications.

Features

The IXGH72N60A3 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. Key features include:
1. Voltage Rating: 600V, suitable for various power electronics applications.
2. Current Rating: 72A, capable of handling significant power loads.
3. Low Saturation Voltage: Ensures efficient operation with reduced power loss during conduction.
4. Fast Switching Speed: Suitable for high-frequency applications, improving overall efficiency.
5. Thermal Stability: Designed for reliable performance under varying thermal conditions.
6. Low Gate Charge: Reduces drive power requirements, enhancing system efficiency.
7. Robust Packaging: Typically available in a TO-247 package, facilitating easy integration into power modules.
8. Applications: Ideal for use in inverters, motor drives, and power supplies.
These features make the IXGH72N60A3 a strong choice for applications requiring efficient power management and reliability.

Package

The IXGH72N60A3 is typically packaged in a TO-247 format, which is a power package designed for high-performance applications.

Pinout

The IXGH72N60A3 is an N-channel MOSFET designed for high voltage applications. It features a TO-247 package, which has a total of three pins.
Pin Count and Function:
1. Gate (G): This pin controls the MOSFET's operation, allowing it to switch on or off by applying a voltage.
2. Drain (D): This pin is where the main current flows out of the device when it is in the "on" state.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit.
The IXGH72N60A3 is rated for a maximum drain-source voltage of 600V and can handle continuous drain currents up to 72A, making it suitable for various power applications, including industrial and automotive systems.

Manufacturer

The IXGH72N60A3 is manufactured by IXYS Corporation, which is a part of the IXYS Integrated Circuits Division. IXYS Corporation specializes in the design and manufacture of power semiconductors and integrated circuit solutions for various applications, including industrial, telecommunications, and renewable energy sectors. The company is known for its expertise in high-performance power management, providing products like MOSFETs, IGBTs, and diodes. IXYS has a strong focus on innovation and reliability, catering to both commercial and technical markets.

Application

The IXGH72N60A3 is an N-channel insulated gate bipolar transistor (IGBT) primarily used in applications such as motor drives, power inverters, and switch-mode power supplies. It is ideal for high-voltage and high-current applications, including industrial automation, renewable energy systems, and electric vehicles. Its fast switching capabilities and efficiency make it suitable for applications requiring reliable performance in power conversion and control.

Equivalent

The IXGH72N60A3 is an IGBT (Insulated Gate Bipolar Transistor) with a 600V rating and 72A current capacity. Equivalent products include:
1. Mitsubishi MGF50N60
2. Infineon IGBT600V 75A
3. STMicroelectronics STGW75H60
4. Fairchild FGH60N60
Always verify specifications for compatibility based on your application needs.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

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