IXGH32N170

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IXGH32N170

IGBT NPT 1700V 75A TO-247AD

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  • Mfr. Partie #IXGH32N170
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  • En stock6257

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Spécifications

Part Status Active
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1700 V
Current - Collector (Ic) (Max) 75 A
Vce(on) (Max) @ Vge, Ic 3.3V @ 15V, 32A
Power - Max 350 W
Switching Energy 11mJ (off)
Input Type Standard
Gate Charge 155 nC
Td (on/off) @ 25°C 45ns/270ns
Test Condition 1020V, 32A, 2.7Ohm, 15V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AD
Base Product Number IXGH32
Current - Collector Pulsed (Icm) 200 A

Vue d'ensemble

Description

The IXGH32N170 is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for power applications. It features a voltage rating of 1,700 volts and a current rating of 32 amps, making it suitable for medium-voltage applications in industrial automation, renewable energy systems, and motor drives.
Key characteristics include low on-state voltage drop, fast switching speeds, and high thermal performance, which enhance efficiency and reduce energy losses in power conversion processes. The IXGH32N170 is often used in inverter applications, such as solar inverters and UPS systems, due to its ability to handle high power levels with reliability.
The device is typically packaged in a TO-247 form factor, allowing for effective heat dissipation and facilitating installation in various systems. Its ruggedness and efficiency make it a popular choice among engineers seeking reliable performance in demanding environments.

Features

The IXGH32N170 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 170V.
2. Current Rating: Capable of handling continuous drain currents up to 32A.
3. Low On-Resistance: Offers a low R_DS(on), typically around 0.18 ohms, minimizing conduction losses.
4. Gate Threshold Voltage: Features a gate threshold voltage (V_GS(th)) that allows for efficient switching.
5. Fast Switching Speed: Suitable for high-frequency applications due to its fast turn-on and turn-off characteristics.
6. Thermal Performance: Comes with a robust package that aids in thermal dissipation, allowing for reliable operation under various conditions.
7. Applications: Ideal for power supplies, motor drives, and inverters.
These attributes make the IXGH32N170 suitable for applications requiring high efficiency and reliability in power management scenarios.

Package

The IXGH32N170 is typically available in a TO-247 package. This package type is designed for high-power applications, offering good thermal performance and electrical insulation.

Pinout

The IXGH32N170 is an N-channel MOSFET transistor used in power electronics applications, particularly for high-voltage and high-current switching. It features a total of 4 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the switching of the MOSFET. A voltage applied here allows the device to turn on or off.
2. Drain (D): This pin is connected to the load and carries the current when the device is in the 'on' state.
3. Source (S): This pin is connected to the ground or the negative side of the circuit and serves as the return path for the current.
4. Gate-Source (G-S) or Drain-Source (D-S): There may be additional pins for specific functions such as body diodes or internal connections, depending on the package type.
The IXGH32N170 is rated for a maximum drain-source voltage of 170 V and can handle continuous drain current up to 32 A, making it suitable for various applications in power switching and inverter circuits.

Manufacturer

The IXGH32N170 is manufactured by IXYS Corporation, which is a part of the Littelfuse family of companies. IXYS specializes in power semiconductors, which include devices such as MOSFETs, IGBTs, and diodes. The company primarily focuses on providing solutions for power management and control in various applications, including industrial, automotive, and renewable energy systems. IXYS is known for its innovation in high-efficiency devices and has a strong presence in the semiconductor industry. The acquisition by Littelfuse in 2018 expanded their capabilities in power electronics, enhancing their product offerings in the market.

Application

The IXGH32N170 is a high-voltage, high-speed IGBT (Insulated Gate Bipolar Transistor) used primarily in power electronics applications. Its main application areas include motor drives, industrial automation, renewable energy systems (like solar inverters), UPS (uninterruptible power supplies), and electric vehicles. It provides efficient switching, high current capacity, and thermal performance, making it suitable for applications requiring reliable power control.

Equivalent

The IXGH32N170 is a high-voltage, N-channel MOSFET. Equivalent products include:
1. Infineon IPB65R170P6
2. Vishay SiHG32N170
3. STMicroelectronics STP32NF170
4. ON Semiconductor NVMFS5C170NL
Always verify specifications such as voltage, current rating, and switching characteristics to ensure compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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