IXFP22N65X2M

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IXFP22N65X2M

MOSFET N-CH 650V 22A TO220

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  • Mfr. Partie #IXFP22N65X2M
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  • En stock2221

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Spécifications

Series HiPerFET™, Ultra X2
Part Status Active
Base Product Number IXFP22
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 145mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2190 pF @ 25 V
Power Dissipation (Max) 37W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Isolated Tab
Package TO-220-3 Full Pack, Isolated Tab
Packaging Tube

Vue d'ensemble

Description

The IXFP22N65X2M is a high-performance N-channel MOSFET designed for use in various applications, including power supplies, motor drives, and DC-DC converters. It features a voltage rating of 650V and a continuous drain current of up to 22A, making it suitable for high-voltage and high-current applications. The device is optimized for low on-resistance and fast switching speeds, which contribute to improved efficiency and reduced power loss in circuits.
This MOSFET also incorporates advanced thermal performance characteristics, allowing for effective heat dissipation, which enhances reliability and longevity in demanding environments. The IXFP22N65X2M is typically packaged in a TO-247 format, facilitating easier heat management and assembly in electronic designs.
Overall, the IXFP22N65X2M is an excellent choice for engineers seeking robust, efficient, and reliable solutions in power electronic applications.

Features

The IXFP22N65X2M is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-to-source voltage (VDS) of 650V, making it suitable for high-voltage applications.
2. Continuous Drain Current: The device can handle a continuous drain current (ID) of 22A at a temperature of 25°C.
3. RDS(on): It offers a low on-state resistance (RDS(on)) of approximately 0.5 ohms, which helps reduce power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) is in the range of 2V to 4V, allowing for efficient driving with standard gate voltages.
5. Fast Switching: The IXFP22N65X2M features fast switching capabilities, enabling efficient performance in high-frequency applications.
6. Thermal Performance: It comes in a TO-247 package, allowing for effective heat dissipation.
These features make the IXFP22N65X2M ideal for applications such as power supplies, converters, and motor drives.

Package

The IXFP22N65X2M is packaged in a TO-220 format. This package type is designed for efficient thermal management and is commonly used for power MOSFETs, allowing for easy mounting on heatsinks.

Pinout

The IXFP22N65X2M is a N-channel MOSFET designed for high-voltage applications. It typically comes in a TO-220 package, which has a pin count of three. The pin configuration is as follows:
1. Gate (G) - This pin controls the MOSFET and is used to turn it on or off.
2. Drain (D) - This pin is where the load is connected, and it carries the current when the device is on.
3. Source (S) - This pin is connected to the ground or negative side of the circuit.
The IXFP22N65X2M can handle a maximum drain-source voltage of 650V and has a continuous drain current rating, making it suitable for applications like power supplies, motor drivers, and other high-voltage switching applications.

Manufacturer

The IXFP22N65X2M is manufactured by IXYS Corporation, a subsidiary of Littelfuse, Inc. IXYS specializes in the design and manufacture of high-performance power semiconductors and integrated circuits. Their products are widely used in various applications, including power management, renewable energy, industrial automation, and automotive electronics. The company is known for its innovation in power conversion and control technologies, offering solutions that enhance energy efficiency and performance in electronic systems. Littelfuse, as a parent company, focuses on circuit protection, power control, and sensing technologies, catering to a diverse range of industries.

Application

The IXFP22N65X2M is a high-voltage N-channel MOSFET primarily used in power supply applications, such as switch-mode power supplies (SMPS), DC-DC converters, and inverters. Its features make it suitable for industrial automation, motor control, and renewable energy systems like solar inverters. Additionally, it can be used in high-frequency switching applications due to its fast switching capabilities, enhancing efficiency in various electronic devices.

Equivalent

The IXFP22N65X2M is an N-channel MOSFET. Equivalent products include:
1. STP22NF65 - from STMicroelectronics
2. IRFP260N - from Infineon
3. FDP22N65 - from ON Semiconductor
4. BSC022N65 - from Infineon
Always verify specifications such as voltage, current, and thermal characteristics to ensure compatibility.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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