IXFN180N10

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IXFN180N10

MOSFET N-CH 100V 180A SOT-227B

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  • Mfr. Partie #IXFN180N10
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Spécifications

Series HiPerFET™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 360 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9100 pF @ 25 V
Power Dissipation (Max) 600W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC
Base Product Number IXFN180

Vue d'ensemble

Description

IXFN180N10 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by IXYS. It is designed for high-voltage applications, featuring a maximum drain-source voltage (V_DS) of 1000V and a continuous drain current (I_D) rating of up to 180A at a specified temperature. The device is characterized by its low on-resistance (R_DS(on)), which minimizes power losses during operation, making it suitable for applications in power conversion, motor drives, and switching power supplies. It typically incorporates a fast switching capability and is optimized for efficiency in high-performance circuits. The IXFN180N10 is housed in a robust package to facilitate thermal management, ensuring reliable operation in demanding environments. Its performance attributes make it a popular choice for engineers and designers in the fields of industrial and renewable energy systems.

Features

The IXFN180N10 is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of 100V.
2. Current Handling: It can handle a continuous drain current (I_D) of up to 180A, making it suitable for high-power applications.
3. R_DS(on): The on-resistance is low, typically around 10 mΩ, which minimizes power loss and improves efficiency.
4. Gate Threshold Voltage: It has a gate-source threshold voltage (V_GS(th)) ranging from 2V to 4V, facilitating easy drive with standard logic levels.
5. Package Type: Available in a TO-220 package, which offers good thermal performance and ease of mounting.
6. Fast Switching: The device is capable of high-speed switching, making it ideal for applications like power supplies, motor drives, and converters.
7. Thermal Resistance: Low thermal resistance enhances its ability to dissipate heat.
Overall, the IXFN180N10 is designed for efficiency and reliability in demanding power applications.

Package

The IXFN180N10 is packaged in a TO-220 form factor, which is a metallic package designed for high power handling and efficient heat dissipation.

Pinout

The IXFN180N10 is a high-power N-channel MOSFET designed for various applications including power management and switching. It features a pin count of 3. The pins and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin determines whether the device is on (conducting) or off (non-conducting).
2. Drain (D): This pin connects to the load. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative supply voltage in most configurations.
The IXFN180N10 has a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 180A, making it suitable for high-efficiency power applications.

Manufacturer

The IXFN180N10 is manufactured by IXYS Corporation, which is a subsidiary of Littelfuse, Inc. IXYS specializes in power semiconductor products, including MOSFETs, IGBTs, and diode modules, as well as integrated circuits for various applications such as power management, motor control, and renewable energy systems. The company focuses on providing solutions for sectors like industrial automation, telecommunications, and automotive electronics. IXYS is known for its innovation in semiconductor technology and caters to a global market, making it a key player in the electronic components industry.

Application

The IXFN180N10 is an N-channel MOSFET primarily used in power management applications such as DC-DC converters, motor drives, and power supplies. It is suitable for high-efficiency switching applications in renewable energy systems, electric vehicles, and industrial automation. Its fast switching speed and low on-resistance make it ideal for applications requiring high performance and thermal efficiency.

Equivalent

The IXFN180N10 is a N-channel MOSFET with a 100V rating and a 180A current capacity. Equivalent products include the Infineon IPP180N10N3, STMicroelectronics STP180N10, and ON Semiconductor NTP180N10. Always verify specifications such as RDS(on), gate charge, and package type to ensure compatibility for your application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

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