IXFK26N100P

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IXFK26N100P

MOSFET N-CH 1000V 26A TO264AA

  • Fabricant
  • Mfr. Partie #IXFK26N100P
  • Paquet TO264-3
  • Fiche de données
  • En stock7993

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Spécifications

Package Tube
Series HiPerFET™, Polar
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 1000 V
Current-ContinuousDrain(Id)@25°C 26A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 390mOhm @ 13A, 10V
Vgs(th)(Max)@Id 6.5V @ 1mA
GateCharge(Qg)(Max)@Vgs 197 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 11900 pF @ 25 V
PowerDissipation(Max) 780W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-264AA (IXFK)

Vue d'ensemble

Description

The IXFK26N100P is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for applications requiring high voltage and current handling capabilities. It has a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) rating of 26A, making it suitable for power management in various electronic circuits, including power supplies, motor drivers, and switching applications.
Key features of the IXFK26N100P include low on-resistance (R_DS(on)), which results in efficient power dissipation and reduced heat generation during operation. It also offers fast switching speeds, enhancing the overall efficiency of the circuit. The device typically comes in a TO-220 package, facilitating easy heat dissipation and mounting.
Overall, the IXFK26N100P is a versatile component for engineers and designers looking for reliable performance in demanding electrical environments.

Features

The IXFK26N100P is a high-performance N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Current Rating: With a continuous drain current (I_D) of 26A, it can handle significant loads efficiently.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 0.05Ω (at V_GS = 10V), minimizing power losses during operation.
4. Fast Switching: The device supports fast switching speeds, promoting efficiency in high-frequency applications.
5. Thermal Performance: It features a TO-220 package that facilitates effective heat dissipation, enhancing reliability in demanding conditions.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is low, allowing for easy drive with standard logic levels.
These characteristics make the IXFK26N100P suitable for use in power supplies, motor drives, and other industrial applications.

Package

The IXFK26N100P is packaged in a TO-247 format. This package type is designed for power transistors and provides efficient heat dissipation, making it suitable for high-power applications.

Pinout

The IXFK26N100P is an N-channel MOSFET with a total of 6 pins. The typical pin configuration and their functions are as follows:
1. Gate (G): Controls the operation of the MOSFET; applies voltage to turn it on or off.
2. Drain (D): The output terminal where the load is connected; current flows out of this terminal when the device is on.
3. Source (S): Common terminal for current flow; connects to ground or the lower potential in a circuit.
The remaining pins are typically for heat dissipation and other auxiliary functions, depending on the specific package and configuration. The IXFK26N100P is designed for high-voltage applications, supporting a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 26A, making it suitable for various power management tasks.

Manufacturer

The IXFK26N100P is manufactured by IXYS Corporation, which is a subsidiary of Littelfuse, Inc. IXYS specializes in high-performance power semiconductors and integrated circuits. The company focuses on providing solutions for applications in power management, renewable energy, and industrial automation. IXYS products are widely used in areas such as motor drives, power supplies, and automotive systems, emphasizing efficiency and reliability in high-voltage and high-frequency environments. Their innovations are integral to various sectors, including telecommunications, industrial, and consumer electronics.

Application

The IXFK26N100P is an N-channel power MOSFET primarily used in high-voltage applications such as switch-mode power supplies, motor drives, and industrial automation. Its features make it suitable for power conversion, inverters, and renewable energy systems. Additionally, it is applicable in amplifiers and other high-efficiency electronic circuits where low on-resistance and fast switching are essential.

Equivalent

The IXFK26N100P is an N-channel MOSFET typically used in high-voltage applications. Equivalent products include the IRF840, STP26NM60, and FQP26N80. For precise applications, it's essential to check specifications like voltage, current ratings, and Rds(on) for compatibility.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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