IXFH80N65X2

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IXFH80N65X2

MOSFET N-CH 650V 80A TO247

  • Fabricant
  • Mfr. Partie #IXFH80N65X2
  • Paquet TO-247-3
  • Fiche de données
  • En stock5288

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Spécifications

Package Tube
Series HiPerFET™, Ultra X2
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 80A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 40mOhm @ 40A, 10V
Vgs(th)(Max)@Id 5.5V @ 4mA
GateCharge(Qg)(Max)@Vgs 143 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 8245 pF @ 25 V
PowerDissipation(Max) 890W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247 (IXTH)

Vue d'ensemble

Description

The IXFH80N65X2 is a high-performance N-channel MOSFET designed for applications requiring efficient power management. It features a voltage rating of 650V and a continuous drain current of 80A, making it suitable for high-voltage power supplies, motor drives, and industrial applications.
Key characteristics include low on-resistance (RDS(on)), which reduces power loss and enhances thermal performance, as well as fast switching capabilities that improve overall efficiency in circuit designs. The device is housed in a TO-247 package, allowing for effective heat dissipation.
The IXFH80N65X2 is ideal for engineers seeking reliable components for high-efficiency designs in renewable energy systems, electric vehicles, and other advanced power electronics applications. Its robust performance and reliability make it a popular choice in the industry.

Features

The IXFH80N65X2 is an N-channel MOSFET known for its high performance in power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, enabling use in high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 80A, suitable for demanding power management tasks.
3. R_DS(on): It offers a low on-resistance (R_DS(on)), typically around 0.125 ohms, which minimizes power losses during operation.
4. Gate Threshold Voltage: The threshold voltage (V_GS(th)) is relatively low, facilitating easier switching.
5. Fast Switching: Designed for quick turn-on and turn-off times, aiding efficiency in switching applications.
6. Thermal Performance: Comes in a TO-247 package, allowing for effective heat dissipation.
These features make the IXFH80N65X2 ideal for applications like power supplies, motor drivers, and other high-efficiency circuits.

Package

The IXFH80N65X2 is typically packaged in a TO-247 housing. This package type is designed for high-power applications and provides good thermal performance due to its larger size and efficient heat dissipation capabilities.

Pinout

The IXFH80N65X2 is a high-voltage N-channel MOSFET from IXYS Corporation. It features a TO-220 package with a pin count of 3.
The pin functions are as follows:
1. Gate (G): This pin controls the switching of the MOSFET. A voltage applied to this pin allows current to flow between the Drain and Source.
2. Drain (D): This pin is where the output current exits the MOSFET when it is in the 'on' state. It connects to the load.
3. Source (S): This pin is the return path for the current flowing through the Drain. It is typically connected to ground.
The IXFH80N65X2 is rated for a maximum drain-source voltage of 650V and a continuous drain current of 80A, making it suitable for high-voltage applications such as power supplies and motor drives.

Manufacturer

The IXFH80N65X2 is manufactured by IXYS Corporation, which is now part of Littelfuse, Inc. IXYS is known for its development and production of semiconductor products, including power MOSFETs, IGBTs, diodes, and other components used in various applications such as power management, motor control, and renewable energy systems. The company specializes in high-performance power and RF (radio frequency) semiconductors, serving industries like automotive, telecommunications, and industrial automation.

Application

The IXFH80N65X2 is a high-performance N-channel MOSFET primarily used in applications such as power supplies, motor control, and automotive systems. Its high voltage and current ratings make it suitable for switch-mode power supplies (SMPS), DC-DC converters, and inverters. Additionally, it is utilized in industrial automation and renewable energy systems, like solar inverters, where efficient power conversion is essential.

Equivalent

The IXFH80N65X2 is an N-channel MOSFET. Equivalent products include the Infineon IPP65R80P6, STMicroelectronics STP80NF65, and ON Semiconductor NTP80N65. Check specific datasheets for detailed specifications to ensure compatibility.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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