IXFH60N65X2

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IXFH60N65X2

MOSFET N-CH 650V 60A TO247

  • Fabricant
  • Mfr. Partie #IXFH60N65X2
  • Paquet TO-247-3
  • Fiche de données
  • En stock2116

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Spécifications

Package Tube
Series HiPerFET™, Ultra X2
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 60A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 52mOhm @ 30A, 10V
Vgs(th)(Max)@Id 5.5V @ 4mA
GateCharge(Qg)(Max)@Vgs 107 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 6180 pF @ 25 V
PowerDissipation(Max) 780W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247 (IXTH)

Vue d'ensemble

Description

The IXFH60N65X2 is a high-performance MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for applications requiring high voltage and high efficiency. It has a voltage rating of 650V and a current rating of 60A, making it suitable for power management in various electronic devices, including power supplies, motor drives, and energy conversion systems.
Notable features include low on-resistance, fast switching speeds, and high thermal performance, which contribute to improved efficiency and reduced heat generation in circuits. The device is constructed using advanced silicon technology, ensuring reliability and robustness in demanding operating conditions.
Typical applications include industrial power supplies, renewable energy systems, and electric vehicles. The IXFH60N65X2 is housed in a TO-247 package, facilitating easy heat dissipation and integration into various electronic designs. Overall, it is an ideal choice for engineers looking for a reliable and efficient solution in high-voltage applications.

Features

The IXFH60N65X2 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: The device supports a continuous drain current (ID) of up to 60A, allowing it to handle significant loads.
3. RDS(on): It offers a low on-resistance, typically around 0.31 ohms, which reduces conduction losses and improves efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (VGS(th)) ranges from 2V to 4V, facilitating easy drive with standard gate voltages.
5. Fast Switching: The IXFH60N65X2 features fast switching characteristics, suitable for high-frequency applications.
6. Package Type: It comes in a TO-247 package, enabling effective heat dissipation.
7. Applications: Commonly used in power supplies, motor drives, and other high-voltage circuits.
These features make the IXFH60N65X2 a reliable choice for various demanding electronic applications.

Package

The IXFH60N65X2 is typically available in a TO-220 package type. This package is designed for power applications, providing good thermal performance and ease of mounting on heat sinks.

Pinout

The IXFH60N65X2 is a high-voltage N-channel MOSFET designed for power applications. It typically has a TO-220 package with three pins.
Pin Configuration:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin turns the device on or off.
2. Drain (D): This pin connects to the load; current flows from the drain to the source when the device is on.
3. Source (S): This pin is connected to the ground or lower potential in the circuit.
Key Specifications:
- Maximum Drain-Source Voltage (V_DS): 650V
- Continuous Drain Current (I_D): 60A
- R_DS(on) (Resistance when on): Low, allowing efficient operation.
The IXFH60N65X2 is commonly used in switch-mode power supplies, motor drives, and other high-voltage applications due to its efficiency and thermal performance.

Manufacturer

The IXFH60N65X2 is manufactured by IXYS Corporation, a subsidiary of Littelfuse, Inc. IXYS specializes in power semiconductors and integrated circuits, focusing on high-performance applications in energy, automotive, and industrial markets. The company is known for producing high-voltage products, including MOSFETs, IGBTs, and rectifiers, catering to a wide range of electronic and electrical applications. Littelfuse, a global leader in circuit protection, acquired IXYS in 2018 to enhance its portfolio in power management solutions.

Application

The IXFH60N65X2 is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its key areas include power supplies, motor drives, inverter circuits, and renewable energy systems like solar inverters. It is suitable for high-efficiency switching applications in both industrial and consumer electronics, providing improved thermal performance and reduced energy loss.

Equivalent

The IXFH60N65X2 is a 650V, 60A N-channel MOSFET. Equivalent products include:
1. Infineon IRFPG60
2. STMicroelectronics STP60NF65
3. NXP PSMN2R6-80BLS
4. ON Semiconductor NTP60N65
Always verify specifications to ensure compatibility for your specific application.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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