IXFH40N30Q

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IXFH40N30Q

MOSFET N-CH 300V 40A TO247AD

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Spécifications

Series HiPerFET™
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3100 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AD (IXFH)
Package / Case TO-247-3
Base Product Number IXFH40

Vue d'ensemble

Description

The IXFH40N30Q is a high-performance N-channel MOSFET designed for power management applications. It is manufactured by IXYS, a company known for its semiconductor solutions. This MOSFET features a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) rating of up to 40A, making it suitable for high-current applications.
The device is built using advanced silicon technology, which provides low on-resistance (R_DS(on)), resulting in reduced power losses and improved efficiency. Its fast switching capabilities make it ideal for applications such as power supplies, motor drives, and DC-DC converters.
The IXFH40N30Q is also designed to withstand high temperatures and is available in a standard TO-220 package, facilitating ease of heat dissipation. Overall, it is a reliable choice for engineers looking to optimize performance in compact power electronic designs.

Features

The IXFH40N30Q is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to medium voltage applications.
2. Current Rating: It can handle continuous drain currents up to 40A, providing robust power handling capabilities.
3. R_DS(on): The on-resistance is very low (typically around 12 mΩ), enabling efficient operation with minimal power loss.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 1V to 2.5V, allowing for easy drive with logic-level signals.
5. Package Type: Available in TO-220 or similar packages, facilitating effective heat dissipation.
6. Switching Speed: It features fast switching capabilities, making it suitable for applications like DC-DC converters and motor drivers.
7. Thermal Resistance: Offers good thermal management, ensuring reliability under high loads.
These features make the IXFH40N30Q ideal for applications in power supplies, automotive systems, and industrial controls.

Package

The IXFH40N30Q is typically packaged in a TO-220 form factor. This package type is designed for power devices, providing good thermal performance and ease of mounting to heat sinks.

Pinout

The IXFH40N30Q is an N-channel MOSFET with a pin count of 4. Its primary functions include switching and amplification in power electronics applications.
### Pin Configuration:
1. Gate (G): Controls the MOSFET operation, allowing it to turn on or off.
2. Drain (D): The terminal where the current flows out when the device is on.
3. Source (S): The terminal where the current enters when the device is in operation.
4. Tab (or case): Often connected to the source terminal and serves as a heat sink for dissipating heat.
The IXFH40N30Q is designed for high-voltage applications, typically rated for 300V, and can handle high current, making it suitable for use in power supplies, motor drives, and other high-power applications.

Manufacturer

The IXFH40N30Q is manufactured by IXYS Corporation, a subsidiary of Littelfuse, Inc. IXYS is well-known for its development and production of power semiconductor devices, including MOSFETs, IGBTs, and diodes, primarily for applications in power management, automotive, and renewable energy sectors. The company focuses on high-performance semiconductor solutions that cater to a variety of industries, including industrial, telecommunications, and consumer electronics. Littelfuse, which acquired IXYS in 2018, is a leading global manufacturer of circuit protection products, semiconductor solutions, and other electronic components.

Application

The IXFH40N30Q is an N-channel MOSFET commonly used in applications such as power supplies, motor control, and high-efficiency converters. It suits switching applications in electric vehicles, renewable energy systems, and industrial automation, where high voltage and current handling capabilities are essential. Its low on-resistance and fast switching characteristics make it ideal for enhancing energy efficiency in various electronic circuits and power management systems.

Equivalent

The IXFH40N30Q is an N-channel MOSFET with a 40V, 30A rating. Equivalent products include the Infineon IRFB30N40, STMicroelectronics STP30NF40, and ON Semiconductor NTMFS5C404N. Always check specific parameters like RDS(on) and gate charge for precise compatibility in applications.

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