IXFH20N85X

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IXFH20N85X

MOSFET N-CH 850V 20A TO247

  • Fabricant
  • Mfr. Partie #IXFH20N85X
  • Paquet TO-247-3
  • Fiche de données
  • En stock6369

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Spécifications

Package Tube
Series HiPerFET™, Ultra X
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 850 V
Current-ContinuousDrain(Id)@25°C 20A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 330mOhm @ 500mA, 10V
Vgs(th)(Max)@Id 5.5V @ 2.5mA
GateCharge(Qg)(Max)@Vgs 63 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 1660 pF @ 25 V
PowerDissipation(Max) 540W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247 (IXTH)

Vue d'ensemble

Description

The IXFH20N85X is a high-performance N-channel MOSFET designed for applications requiring efficient power management, such as in DC-DC converters, motor drives, and power supplies. It features a maximum drain-source voltage (V_DS) of 850V and a continuous drain current (I_D) of 20A, making it suitable for high-voltage and high-current applications.
With low on-resistance (R_DS(on)), it minimizes power loss during operation, enhancing overall efficiency. The IXFH20N85X also has a high-speed switching capability, which is advantageous for fast-switching applications, reducing switching losses and improving thermal performance.
This MOSFET typically comes in a TO-220 package, providing excellent thermal performance through effective heat dissipation. It is ideal for use in industrial, automotive, and renewable energy systems, where reliability and efficiency are paramount. Proper thermal management and gate drive design are essential for optimal performance in real-world applications.

Features

The IXFH20N85X is a high-voltage N-channel MOSFET designed for a variety of power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 850V, suitable for high-voltage applications.
2. Current Rating: Capable of handling continuous drain currents up to 20A, making it ideal for power management.
3. Low On-Resistance: Offers a low R_DS(on) value, which reduces power losses and improves efficiency in switching applications.
4. Fast Switching Speed: Designed for rapid switching, which enhances performance in high-frequency applications.
5. Thermal Performance: The package allows for efficient heat dissipation, essential for maintaining performance under load.
6. Gate Threshold Voltage: Features a controlled gate threshold voltage, enabling reliable turn-on characteristics.
These features make the IXFH20N85X suitable for use in power supplies, motor drives, and inverters, especially in renewable energy and industrial applications.

Package

The IXFH20N85X is packaged in a TO-220 style package. This type of package is designed for high-power applications, providing good thermal performance and easy mounting for heat dissipation.

Pinout

The IXFH20N85X is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a total of 5 pins.
Pin Functions:
1. Gate (G): This pin controls the MOSFET's switching. A voltage applied here allows current to flow between the drain and source.
2. Drain (D): This pin is the output where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin serves as the reference for the gate voltage and is typically connected to ground or the negative side of the load.
The other two pins are typically the stabilization or heat dissipation pins, mainly used for mounting and ensuring effective thermal management.
This MOSFET is designed for high-voltage applications, with a maximum voltage rating of 850V and a current rating of 20A, making it suitable for power management in various applications.

Manufacturer

The IXFH20N85X is manufactured by IXYS Corporation, a subsidiary of Littelfuse, Inc. IXYS is known for designing and producing high-performance semiconductor products, particularly in power management and power electronics. The company specializes in discrete power semiconductors, integrated circuits, and hybrid devices, serving various industries, including automotive, industrial, and renewable energy. Established in 1983, IXYS has focused on innovation and quality in power semiconductor technology. Littelfuse, which acquired IXYS in 2018, enhances its portfolio in circuit protection and power solutions, solidifying IXYS's role in the semiconductor market.

Application

The IXFH20N85X is an N-channel power MOSFET used in various applications, including:
1. Switching Power Supplies: Efficiently manage power conversion.
2. Motor Drives: Control electric motors in industrial and automotive settings.
3. DC-DC Converters: Optimize voltage regulation.
4. Inverters: Facilitate solar and renewable energy systems.
5. Telecommunications: Power management in telecom equipment.
Its high voltage and current ratings make it suitable for demanding applications requiring robust performance.

Equivalent

The IXFH20N85X is a high-speed N-channel MOSFET. Equivalent products include the IRF840, IRF840PBF, and STP20NF85. Always verify specifications like voltage, current rating, and RDS(on) to ensure compatibility for your specific application.

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