IXFH150N20T

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IXFH150N20T

MOSFET N-CH 200V 150A TO247AD

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Spécifications

Series HiPerFET™, Trench
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 15mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 177 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11700 pF @ 25 V
Power Dissipation (Max) 890W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AD (IXFH)
Package / Case TO-247-3
Base Product Number IXFH150

Vue d'ensemble

Description

The IXFH150N20T is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features a voltage rating of 200V and a continuous drain current of 150A, making it suitable for high-voltage and high-current applications. Its low on-resistance (R_DS(on)) ensures efficient power management by minimizing heat generation during operation.
This MOSFET is typically used in applications such as power supplies, motor control, and DC-DC converters. The IXFH150N20T offers fast switching speeds, contributing to improved efficiency in switching applications. Additionally, it is packaged in a TO-220 form, which facilitates easy heat dissipation and mounting.
Overall, the IXFH150N20T is a reliable choice for engineers seeking efficient and robust MOSFET solutions in demanding electronic systems.

Features

The IXFH150N20T is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, making it suitable for applications requiring high voltage handling.

2. Current Rating: It can handle a continuous drain current (I_D) of up to 150A, allowing it to manage significant loads.
3. On-Resistance: It boasts a low on-resistance (R_DS(on)) of approximately 0.08 Ohms, which minimizes power losses during operation.
4. Thermal Performance: With a maximum junction temperature of 175°C, it offers good thermal stability for demanding environments.
5. Fast Switching: The device features low gate charge (Q_g), enabling fast switching speeds, which is beneficial for high-frequency applications.
6. Package Type: Typically available in a TO-220 package, providing effective heat dissipation.
Overall, the IXFH150N20T is ideal for use in power supplies, motor drives, and other applications requiring efficient power management.

Package

The IXFH150N20T is packaged in a TO-220 package type. This format provides efficient heat dissipation and is commonly used for high-power applications.

Pinout

The IXFH150N20T is a high-power N-channel MOSFET manufactured by IXYS. It features a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): This is the output pin where the load is connected. It carries the current from the drain to the source.
3. Source (S): This pin is connected to the ground or the negative side of the circuit, completing the electrical path.
4. Body (B): This pin is typically internally connected to the source and may be used for thermal and electrical grounding.
5. Tab (T): Often used for mounting the device; it also serves as a cooling mechanism.
The IXFH150N20T is known for its low on-resistance and high-speed switching capabilities, making it suitable for power applications in various electronic circuits.

Manufacturer

The IXFH150N20T is manufactured by IXYS Corporation, which is a subsidiary of Littelfuse, Inc. IXYS specializes in semiconductor products, including power semiconductors, integrated circuits, and optoelectronics. The company focuses on high-performance components for applications in various sectors such as industrial, automotive, telecommunications, and renewable energy. IXYS is known for its expertise in power management solutions, including MOSFETs, IGBTs, and diodes, catering to the growing demand for efficient and reliable electronic components.

Application

The IXFH150N20T is a high-voltage, high-current N-channel MOSFET primarily used in applications such as power supplies, motor drives, and inverter circuits. Its fast switching capabilities make it suitable for high-efficiency power conversion, and it is often employed in industrial automation, renewable energy systems, and electric vehicle drivetrains. Its robust design ensures reliability in demanding environments.

Equivalent

The IXFH150N20T is an N-channel MOSFET known for its high current and voltage rating. Equivalent products include:
1. Infineon IRF150
2. STMicroelectronics STP150N20
3. Vishay IRF150N
4. ON Semiconductor NTP150N20
Always verify specifications such as R_DS(on), V_DS, and current ratings for compatibility in your specific application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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