IXFB44N100P

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IXFB44N100P

MOSFET N-CH 1000V 44A PLUS264

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  • Mfr. Partie #IXFB44N100P
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  • En stock4753

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Spécifications

Package Tube
Series HiPerFET™, Polar
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 1000 V
Current-ContinuousDrain(Id)@25°C 44A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 220mOhm @ 22A, 10V
Vgs(th)(Max)@Id 6.5V @ 1mA
GateCharge(Qg)(Max)@Vgs 305 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 19000 pF @ 25 V
PowerDissipation(Max) 1250W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage PLUS264™

Vue d'ensemble

Description

The IXFB44N100P is a high-performance insulated gate bipolar transistor (IGBT) designed for power switching applications. It is part of the IXYS product line and features a voltage rating of 1000V and a maximum continuous current of 44A. The IGBT combines the advantages of MOSFETs and bipolar transistors, offering low on-state voltage drop, high efficiency, and fast switching speeds, making it suitable for various applications such as motor drives, UPS systems, and induction heating.
Key specifications include a low gate threshold voltage and a rapid switching capability, which minimizes power losses during operation. The device also exhibits robust thermal performance, with an adequate thermal resistance rating, ensuring reliability in demanding environments. The IXFB44N100P is typically housed in a TO-247 package, facilitating easy heat dissipation and integration into existing circuits. Overall, it provides an effective solution for high-voltage, high-current applications requiring efficient power management.

Features

The IXFB44N100P is an N-channel power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various high-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 44A, allowing it to support demanding loads.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 0.044 ohms, enhancing efficiency by minimizing power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, facilitating easy drive requirements.
5. Package: It typically comes in a TO-220 package, providing good thermal performance and ease of mounting.
6. Applications: Commonly used in power supplies, converters, and motor drive circuits due to its robustness and efficiency.
Overall, the IXFB44N100P is ideal for applications requiring reliable high-power switching.

Package

The IXFB44N100P is packaged in a TO-247 format, which is a high-power package commonly used for power MOSFETs. This package type provides efficient heat dissipation and is suitable for high-current applications.

Pinout

The IXFB44N100P is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET's switching state.
2. Drain (D) - This pin is the output where the load is connected. It allows current to flow from Drain to Source when the MOSFET is turned on.
3. Source (S) - This pin is connected to ground or the negative side of the power supply.
The IXFB44N100P is designed for high-voltage applications, offering a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 44A. It is commonly used in power switching, motor control, and other applications requiring efficient power management.

Manufacturer

The IXFB44N100P is manufactured by IXYS Corporation, a subsidiary of Littelfuse, Inc. IXYS is known for designing and producing a wide range of semiconductor devices, including power modules, power MOSFETs, and other high-performance components used in various applications such as industrial controls, renewable energy, and electric vehicles. The company specializes in power management solutions and is recognized for its expertise in high-voltage and high-frequency technologies.

Application

The IXFB44N100P is a high-voltage N-channel MOSFET primarily used in applications such as power supplies, motor drives, and industrial automation. It is suitable for tasks like DC-DC converters, inverters, and switching power supplies due to its high efficiency and fast switching capabilities. Additionally, it can be utilized in renewable energy systems and electric vehicles for effective power management and control.

Equivalent

The IXFB44N100P is an N-channel MOSFET. Equivalent products include:
1. IRF240 (International Rectifier)
2. STP44NF10 (STMicroelectronics)
3. FQP44N10 (Fairchild Semiconductor)
4. L830N100 (Littelfuse)
5. BTA44-800V (BTA)
Always verify specifications like voltage, current, and R_DS(on) before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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