IXFA110N15T2

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IXFA110N15T2

MOSFET N-CH 150V 110A TO263

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  • Mfr. Partie #IXFA110N15T2
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Spécifications

Series HiPerFET™, TrenchT2™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8600 pF @ 25 V
Power Dissipation (Max) 480W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2PAK)
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number IXFA110

Vue d'ensemble

Description

The IXFA110N15T2 is a high-performance MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by IXYS, intended for power applications. It features a maximum drain-source voltage (Vds) of 150V and a continuous drain current (Id) rating of 110A, making it suitable for high-voltage and high-current environments. This component is designed for efficient switching, low on-resistance, and reduced gate charge, which enhances overall efficiency in applications such as power supplies, inverters, and motor drives.
The IXFA110N15T2 is typically housed in a TO-220 package, allowing for effective heat dissipation. Its rugged design and thermal stability make it suitable for demanding applications in industrial, automotive, and renewable energy sectors.
Overall, the IXFA110N15T2 is a reliable choice for engineers seeking efficient, high-performance MOSFET solutions in power electronics.

Features

The IXFA110N15T2 is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for various applications, particularly in power electronics. Key features include:
1. Voltage Rating: It typically has a maximum collector-emitter voltage (V_ce) of 1500V, making it suitable for high-voltage applications.

2. Current Rating: The device can handle a continuous collector current (I_c) of up to 110A, allowing for robust performance in demanding environments.
3. Low Switching Losses: Its design minimizes switching losses, enhancing efficiency and reducing thermal stress during operation.
4. High Speed: The IXFA110N15T2 offers fast switching capabilities, making it ideal for applications requiring rapid on/off control.
5. Thermal Performance: It features a low thermal resistance, facilitating efficient heat dissipation and improving reliability.
6. Package Type: It typically comes in a TO-247 package, which supports better thermal management and easy mounting.
These features make the IXFA110N15T2 suitable for various applications, including inverters, motor drives, and other power conversion systems.

Package

The IXFA110N15T2 is packaged in a TO-220 form factor. This type of package provides good thermal performance and is suitable for high-power applications, allowing for efficient heat dissipation.

Pinout

The IXFA110N15T2 is a power MOSFET with a total of 8 pins. Its main functions include switching and amplification in power management applications. The pin configuration typically includes:
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): The terminal through which the current flows out when the device is on.
3. Source (S): The terminal where the current enters when the device is on.
The specific arrangement and additional pins may vary based on the package type (e.g., TO-220, DPAK). This device is designed for high efficiency and low on-resistance, making it suitable for applications such as power supplies, motor drives, and DC-DC converters. Always refer to the manufacturer's datasheet for detailed pinout and electrical characteristics.

Manufacturer

The IXFA110N15T2 is manufactured by IXYS Corporation, which is a subsidiary of Littelfuse, Inc. IXYS specializes in the design and production of high-performance semiconductor devices, particularly in the fields of power management, analog, and digital technology. The company is known for its innovative solutions in applications such as renewable energy, electric vehicles, industrial automation, and telecommunications. IXYS develops a range of products including MOSFETs, IGBTs, diodes, and power modules, catering to various industries that require efficient power control and conversion.

Application

The IXFA110N15T2 is a high-performance MOSFET used in various applications, including power management, DC-DC converters, motor drives, and renewable energy systems such as solar inverters. Its low on-resistance and high-speed switching capabilities make it suitable for high-efficiency designs in automotive, industrial, and consumer electronics.

Equivalent

The IXFA110N15T2 is a 110A, 150V N-channel MOSFET. Equivalent products include the Infineon IRF3205, NXP BSC090N15, and Vishay SiHF110N15. Always check specific datasheets for exact specifications to ensure compatibility in your application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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